A method of selectively etching a metal component of a workpiece further comprising a ferromagnetic insulator component. The method comprises contacting the metal component with an etchant solution. The etchant solution comprises a basic etchant and a solvent. The method is useful in the context of the fabrication of semiconductor-superconductor-ferromagnetic insulator hybrid devices, for example. The etchant solution may not attack the ferromagnetic insulator component. Also provided is a composition for etching a metal, and a kit comprising the composition and a composition for depositing a styrene-acrylate co-polymer on a surface.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

A resin composition comprises, based on 100% by weight of the resin composition: 45-70 wt % of a main resin, 20-45 wt % of a chopped glass fiber, 1-3 wt % of a toughening resin, 0.2-0.5 wt % of an unmodified glycidyl methacrylate, and 0-10 wt % of an auxiliaries. The main resin is selected from at least one of PBT resin and PPS resin. The chopped glass fiber has a dielectric constant of 4.0 to 4.4 at 1 MHz.

A SUS surface treatment method for manufacturing a polymer-SUS joint structure having excellent bond strength is provided. A SUS surface treatment method for bonding with a polymer composite including a first etching step wherein the SUS surface is etched by acidic solution, a surface treatment step wherein the SUS surface is treated by ultrasonic wave, a second etching step wherein the SUS surface is etched again by acidic solution, a first silane coupling treatment step wherein the SUS surface is treated by anodic oxidation, a third etching step wherein the SUS surface is etched by acidic solution, and a second silane coupling treatment step wherein the SUS surface is treated by anodic oxidation.

Disclosed are a composite material, a shell for a mobile device, their manufacturing methods, and a mobile device. The composite material includes: a first metal substrate (100); a first resin fibre plate (200) disposed on an upper surface of the first metal substrate; an antenna layer (300) disposed on an upper surface of the first resin fibre plate; a second resin fibre plate (400) disposed on an upper surface of the antenna layer; and a second metal substrate (500) disposed on an upper surface of the second resin fibre plate.

Disclosed are a composite material, a shell for a mobile device, their manufacturing methods, and a mobile device. The composite material includes: a first metal substrate (100); a first resin fibre plate (200) disposed on an upper surface of the first metal substrate; an antenna layer (300) disposed on an upper surface of the first resin fibre plate; a second resin fibre plate (400) disposed on an upper surface of the antenna layer; and a second metal substrate (500) disposed on an upper surface of the second resin fibre plate.

The present disclosure relates generally to the field of electroplating and electroless plating. More specifically, the present disclosure relates to plating solutions and plating removal/stripping solutions for stripping zinc/nickel alloy plating from substrates.

Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit.

Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit.