There is provided a metal foil suitable for an electrode substrate for an electronic element, which makes it possible to suppress oxidation of the ultra-smooth surface and also prevent roll scratches when wound in a roll. The metal foil of the present invention is made of copper or copper alloy. The front surface of the metal foil has an ultra-smooth surface profile having an arithmetic mean roughness Ra of 30 nm or less as determined in accordance with JIS B 0601-2001. The back surface of the metal has a concave-dominant surface profile having a Pv/Pp ratio of 1.5 or more, the Pv/Pp ratio being a ratio of a maximum profile valley depth Pv to a maximum profile peak height Pp of a profile curve as determined in a rectangular area of 181 μm by 136 μm in accordance with JIS B 0601-2001.

There is provided a metal foil suitable for an electrode substrate for an electronic element, which makes it possible to suppress oxidation of the ultra-smooth surface and also prevent roll scratches when wound in a roll. The metal foil of the present invention is made of copper or copper alloy. The front surface of the metal foil has an ultra-smooth surface profile having an arithmetic mean roughness Ra of 30 nm or less as determined in accordance with JIS B 0601-2001. The back surface of the metal has a concave-dominant surface profile having a Pv/Pp ratio of 1.5 or more, the Pv/Pp ratio being a ratio of a maximum profile valley depth Pv to a maximum profile peak height Pp of a profile curve as determined in a rectangular area of 181 μm by 136 μm in accordance with JIS B 0601-2001.

The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.

A method for coating a motor vehicle part includes coating and subsequently painting. In the coating, a motor vehicle bodyshell part is coated with a metallic zinc coat as cathodic corrosion protection. In the subsequent painting, the coated motor vehicle bodyshell part is painted. The motor vehicle bodyshell part is chemically polished and/or electrochemically polished prior to the coating with the metallic zinc coat.

A method for coating a motor vehicle part includes coating and subsequently painting. In the coating, a motor vehicle bodyshell part is coated with a metallic zinc coat as cathodic corrosion protection. In the subsequent painting, the coated motor vehicle bodyshell part is painted. The motor vehicle bodyshell part is chemically polished and/or electrochemically polished prior to the coating with the metallic zinc coat.

Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid , an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.