A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

A method for chemically polishing a metal surface within a metal-polymer composite, where the composite includes at least one metal part and at least one part made of a polymer composition, the method including the step of: (i) contacting the surface of at least one metal part at least partially with an aqueous solution including an oxidizing agent and an alkaline agent, at a temperature and for a duration sufficient to obtain a shiny metal surface. Also a metal-polymer composite that includes at least one part made of a polymer composition and at least one chemically polished metal part and that is obtainable by the method and to a product including the metal-polymer composite.

The invention concerns a method for the surface treatment of a component, for example a turbomachine component, the component comprising a surface to be treated, the method comprising the following steps: loading a first dispenser with a chemical etching solution and a second dispenser with a rinsing solution, positioning the first dispenser and the second dispenser opposite the surface to be treated, moving the first dispenser and the second dispenser along the surface to be treated, such that the surface to be treated successively receives the chemical etching solution followed by the rinsing solution.

A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.

The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.

Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise α-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.

Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise α-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.

Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.