C25B11/046

TRANSPARENT ELECTRODE, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE USING TRANSPARENT ELECTRODE

To provide a transparent electrode that hardly causes migration of silver and has high resistance, a method for producing the same, and an electronic device using the transparent electrode.

A transparent electrode according to the embodiment includes a laminated structure in which a transparent base material, a conductive silver-containing layer, and a conductive oxide layer are laminated in this order,

wherein a ratio T.sub.800/T.sub.600 of total transmittances of the transparent electrode is 0.85 or more, where T.sub.800 and T.sub.600 are transmittances at wavelengths of 800 nm and 600 nm, respectively, and

the silver-containing layer is continuous. This electrode can be produced by bringing sulfur or a sulfur compound into contact with a laminated film in which a conductive silver-containing layer and a conductive oxide layer are laminated to form a sulfur-containing silver compound layer.

TRANSPARENT ELECTRODE, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE USING TRANSPARENT ELECTRODE

To provide a transparent electrode that hardly causes migration of silver and has high resistance, a method for producing the same, and an electronic device using the transparent electrode.

A transparent electrode according to the embodiment includes a laminated structure in which a transparent base material, a conductive silver-containing layer, and a conductive oxide layer are laminated in this order,

wherein a ratio T.sub.800/T.sub.600 of total transmittances of the transparent electrode is 0.85 or more, where T.sub.800 and T.sub.600 are transmittances at wavelengths of 800 nm and 600 nm, respectively, and

the silver-containing layer is continuous. This electrode can be produced by bringing sulfur or a sulfur compound into contact with a laminated film in which a conductive silver-containing layer and a conductive oxide layer are laminated to form a sulfur-containing silver compound layer.

Li recovery processes and onsite chemical production for Li recovery processes

In this disclosure, a process of recycling acid, base and the salt reagents required in the Li recovery process is introduced. A membrane electrolysis cell which incorporates an oxygen depolarized cathode is implemented to generate the required chemicals onsite. The system can utilize a portion of the salar brine or other lithium-containing brine or solid waste to generate hydrochloric or sulfuric acid, sodium hydroxide and carbonate salts. Simultaneous generation of acid and base allows for taking advantage of both chemicals during the conventional Li recovery from brines and mineral rocks. The desalinated water can also be used for the washing steps on the recovery process or returned into the evaporation ponds. The method also can be used for the direct conversion of lithium salts to the high value LiOH product. The method does not produce any solid effluent which makes it easy-to-adopt for use in existing industrial Li recovery plants.

Li recovery processes and onsite chemical production for Li recovery processes

In this disclosure, a process of recycling acid, base and the salt reagents required in the Li recovery process is introduced. A membrane electrolysis cell which incorporates an oxygen depolarized cathode is implemented to generate the required chemicals onsite. The system can utilize a portion of the salar brine or other lithium-containing brine or solid waste to generate hydrochloric or sulfuric acid, sodium hydroxide and carbonate salts. Simultaneous generation of acid and base allows for taking advantage of both chemicals during the conventional Li recovery from brines and mineral rocks. The desalinated water can also be used for the washing steps on the recovery process or returned into the evaporation ponds. The method also can be used for the direct conversion of lithium salts to the high value LiOH product. The method does not produce any solid effluent which makes it easy-to-adopt for use in existing industrial Li recovery plants.

An Electrolytic Treatment Device for Preparing Plastic Parts to be Metallized and a Method for Etching Plastic Parts
20220411953 · 2022-12-29 ·

The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

DEVICE FOR PERFORMING ELECTROLYSIS OF WATER, AND A SYSTEM THEREOF
20220396886 · 2022-12-15 ·

A device for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure comprising a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface, the electron guiding layer of the semiconductor structure comprising an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode arranged on the surface of the semiconductor structure; and at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode comprises a plurality of quantum dots of In.sub.xGa.sub.(1−x)N material, wherein 0.4≤x≤1. A system comprising such device is also disclosed.

DEVICE FOR PERFORMING ELECTROLYSIS OF WATER, AND A SYSTEM THEREOF
20220396886 · 2022-12-15 ·

A device for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure comprising a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface, the electron guiding layer of the semiconductor structure comprising an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode arranged on the surface of the semiconductor structure; and at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode comprises a plurality of quantum dots of In.sub.xGa.sub.(1−x)N material, wherein 0.4≤x≤1. A system comprising such device is also disclosed.

A PROCESS FOR ENHANCING THE CATALYTIC EFFICIENCY OF OER

The present invention relates to a process for enhancing the catalytic efficiency of a catalyst for the oxygen evolution reaction (OER), comprising exposing the catalyst to an external magnetic field of between 65×10−6 mT and ≤200 mT during the oxygen evolution reaction, wherein the catalyst is a material which exhibits an increased Berry phase induced by the exposure of the catalyst to the external magnetic field.

A PROCESS FOR ENHANCING THE CATALYTIC EFFICIENCY OF OER

The present invention relates to a process for enhancing the catalytic efficiency of a catalyst for the oxygen evolution reaction (OER), comprising exposing the catalyst to an external magnetic field of between 65×10−6 mT and ≤200 mT during the oxygen evolution reaction, wherein the catalyst is a material which exhibits an increased Berry phase induced by the exposure of the catalyst to the external magnetic field.

PERFORATED PLATE STRUCTURE, SUCH AS AN ELECTRODE
20220380913 · 2022-12-01 · ·

A plate structure, such as a plate electrode, comprising two outer layers and an intermediate layer. Both outer layers are provided with a pattern of recesses, such as hexagonal or circular recesses. The recesses on one outer layer are offset with respect to the recesses in the other outer layer. The intermediate layer comprises through-holes, each through-hole connecting a recess at one outer layer with a partially overlapping recess at the opposite outer layer.