C25D17/008

MULTIPLE WAFER SINGLE BATH ETCHER
20180005853 · 2018-01-04 ·

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.

ADAPTIVE FOCUSING AND TRANSPORT SYSTEM FOR ELECTROPLATING

A system and method for plating a workpiece are described. In one aspect, an apparatus includes a deposition chamber, a workpiece holder adapted for insertion into and removal from the deposition chamber, a shield with patterns of apertures corresponding to features on the workpiece, a shield holder also adapted for insertion into and removal from the deposition chamber and a positioning mechanism to position the workpiece in the workpiece holder such that the pattern of apertures on the shield will align with the corresponding features on the workpiece when the workpiece holder and shield holder are inserted into the deposition chamber.

Methods of preparing articles by electrodeposition and additive manufacturing processes

Articles prepared by additive manufacturing of preforms that are coated by electrodeposition of nanolaminate materials, and methods of their production are described.

Electroplating apparatus for tailored uniformity profile

An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position. In another aspect, an electroplating apparatus for electroplating metal includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, a shield configured to shield current at the periphery of the substrate; and an azimuthally asymmetric auxiliary anode configured to donate current to the shielded periphery of the substrate at a selected azimuthal position on the substrate.

WAFER SHIELDING FOR PREVENTION OF LIPSEAL PLATE-OUT

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrode-position of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Conductive external connector structure and method of forming

External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

ELECTROCHEMICAL DEPOSITION SYSTEM FOR A CHEMICAL AND/OR ELECTROLYTIC SURFACE TREATMENT OF A SUBSTRATE

The invention relates to an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate, a module for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the electrochemical deposition system or the module for chemical and/or electrolytic surface treatment for a metal deposition application and a manufacturing method for an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate. The electrochemical deposition system comprises an anode, an anode enclosure, and a single electrolyte. The anode enclosure extends at least partially around the anode. The anode enclosure comprises a membrane. The anode and the anode enclosure are arranged in the single electrolyte. The single electrolyte is the only electrolyte of the electrochemical deposition system.

Cross flow conduit for foaming prevention in high convection plating cells

The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.

PLATING APPARATUS AND PLATING PROCESS METHOD
20220356595 · 2022-11-10 ·

A plating apparatus 1000 includes a plating tank 10 and a substrate holder 30. The plating tank includes an anode 11 arranged in an anode chamber 13. The substrate holder is arranged above the anode chamber and configured to hold a substrate Wf as a cathode. The anode has a cylindrical shape extending in a vertical direction. The plating apparatus further includes a gas accumulation portion 60 and a discharge mechanism 70. The gas accumulation portion is disposed in the anode chamber so as to have a space between the anode and the gas accumulation portion. The gas accumulation portion covers an upper end, an outer peripheral surface, and an inner peripheral surface of the anode to accumulate a process gas generated from the anode. The discharge mechanism is configured to discharge the process gas accumulated in the gas accumulation portion to outside of the plating tank.

ELECTROPLATING SYSTEMS AND METHODS FOR WEAR-RESISTANT COATINGS

An electroplating system includes a tank functioning as an anode, wherein the tank is configured in a horizontal orientation having a length greater than its height, a component part disposed within the tank and functioning as a cathode, an electrical connection, coupled to the anode and cathode, for providing an electric current, and a supply line for delivering an electrolytic fluid to within the tank.