Patent classifications
C25D21/04
Plasma electrolytic oxidation apparatus and method of plasma electrolytic oxidation using the same
In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.
Plasma electrolytic oxidation apparatus and method of plasma electrolytic oxidation using the same
In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.
MULTIPLE WAFER SINGLE BATH ETCHER
An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
MULTIPLE WAFER SINGLE BATH ETCHER
An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
METHOD OF CONTROLLING CHEMICAL CONCENTRATION IN ELECTROLYTE
A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.
ELECTROCHEMICAL-DEPOSITION APPARATUSES AND ASSOCIATED METHODS OF ELECTROPLATING A TARGET ELECTRODE
A method of electroplating a target electrode comprises establishing a first electric current through an electrolytic solution, comprising a quantity of an electrically charged material, an initial electrode, and a transitional electrode, so that a quantity of the electrically charged material is converted to a quantity of an electrically neutral material, which is electroplated, as a deposit, onto the transitional electrode; and establishing a second electric current through the electrolytic solution, the transitional electrode, and the target electrode so that a quantity of the electrically neutral material from the deposit is converted to a quantity of the electrically charged material, which is dissolved into the electrolytic solution, and a quantity of the electrically charged material in the electrolytic solution is converted to a quantity of the electrically neutral material, which is electroplated onto the surface of the target electrode.
Electroplating systems and methods
An electroplating system includes an enclosure with an interior, an anode lead extending through the enclosure and into the interior, and a porous body. The porous body is supported within the interior of the enclosure for coupling an electroplating solution within the interior with a workpiece. A conduit extends through the enclosure and into the interior of the enclosure to provide a flow of nitrogen enriched air to the interior of enclosure for drying and removing oxygen from the electroplating solution.
Electroplating systems and methods
An electroplating system includes an enclosure with an interior, an anode lead extending through the enclosure and into the interior, and a porous body. The porous body is supported within the interior of the enclosure for coupling an electroplating solution within the interior with a workpiece. A conduit extends through the enclosure and into the interior of the enclosure to provide a flow of nitrogen enriched air to the interior of enclosure for drying and removing oxygen from the electroplating solution.
ELECTROCHEMICAL METAL DEPOSITION SYSTEM AND METHOD
An electrochemical deposition apparatus and method for the selective recovery of metal. The electrochemical deposition apparatus comprises a porous cathodic material, an anode, an inter-electrode region formed by the anode and cathode, and a gas release channel. The method may comprise passing a solution comprising a metal into a cavity, changing an oxidation state of a metal, and selectively depositing the metal onto a porous cathodic material. The electrochemical deposition apparatus may recover metal from metal feed in the form of metal hydroxides. The recovered metal may be from any source including, but not limited to, minerals, electronic waste, and black mass.
FILM FORMING METHOD FOR FORMING METAL FILM AND FILM FORMING APPARATUS FOR FORMING METAL FILM
Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.