A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

A plating method capable of controlling a concentration of an additive within a proper range during plating of a substrate is disclosed. The plating method includes: disposing an anode and a substrate, having a via-hole formed in a surface thereof, so as to face each other in a plating solution containing an additive; applying a voltage between the anode and the substrate for filling the via-hole with metal; measuring the voltage applied to the substrate; calculating an amount of change in the voltage per predetermined time; and adjusting a concentration of the additive in the plating solution to keep the amount of change in the voltage within a predetermined control range.

A plating method capable of controlling a concentration of an additive within a proper range during plating of a substrate is disclosed. The plating method includes: disposing an anode and a substrate, having a via-hole formed in a surface thereof, so as to face each other in a plating solution containing an additive; applying a voltage between the anode and the substrate for filling the via-hole with metal; measuring the voltage applied to the substrate; calculating an amount of change in the voltage per predetermined time; and adjusting a concentration of the additive in the plating solution to keep the amount of change in the voltage within a predetermined control range.

Exemplary methods of semiconductor processing may include performing an electroplating operation on a semiconductor substrate in an electroplating bath within a vessel of an electroplating system. The methods may include removing the semiconductor substrate from the electroplating bath. The methods may include closing a valve associated with a first drain from the electroplating system. The methods may include increasing flow to a second drain from the electroplating system. The second drain may be associated with a drain channel from the vessel of the electroplating system.

Exemplary methods of semiconductor processing may include performing an electroplating operation on a semiconductor substrate in an electroplating bath within a vessel of an electroplating system. The methods may include removing the semiconductor substrate from the electroplating bath. The methods may include closing a valve associated with a first drain from the electroplating system. The methods may include increasing flow to a second drain from the electroplating system. The second drain may be associated with a drain channel from the vessel of the electroplating system.

A method of electroplating a target electrode comprises establishing a first electric current through an electrolytic solution, comprising a quantity of an electrically charged material, an initial electrode, and a transitional electrode, so that a quantity of the electrically charged material is converted to a quantity of an electrically neutral material, which is electroplated, as a deposit, onto the transitional electrode; and establishing a second electric current through the electrolytic solution, the transitional electrode, and the target electrode so that a quantity of the electrically neutral material from the deposit is converted to a quantity of the electrically charged material, which is dissolved into the electrolytic solution, and a quantity of the electrically charged material in the electrolytic solution is converted to a quantity of the electrically neutral material, which is electroplated onto the surface of the target electrode.

A method of electroplating a target electrode comprises establishing a first electric current through an electrolytic solution, comprising a quantity of an electrically charged material, an initial electrode, and a transitional electrode, so that a quantity of the electrically charged material is converted to a quantity of an electrically neutral material, which is electroplated, as a deposit, onto the transitional electrode; and establishing a second electric current through the electrolytic solution, the transitional electrode, and the target electrode so that a quantity of the electrically neutral material from the deposit is converted to a quantity of the electrically charged material, which is dissolved into the electrolytic solution, and a quantity of the electrically charged material in the electrolytic solution is converted to a quantity of the electrically neutral material, which is electroplated onto the surface of the target electrode.

The purpose of the present invention is to provide a filling plating system and a filling plating method capable of filling plating sufficiently even if the plating is interrupted between electrolytic plating cells. A filling plating system for forming filling plating in a via hole and/or a through hole of a work to be plated, comprising: a plurality of electrolytic plating cells; and an additive adhesion region arranged between each of the plurality of electrolytic plating cells, wherein solution containing one or more kinds of additive selected from at least a leveler comprising nitrogen-containing organic compound, a brightener comprising sulfur-containing organic compound, and a carrier comprising polyether compound, is directly adhered to the work to be plated at the additive adhesion region.

The purpose of the present invention is to provide a filling plating system and a filling plating method capable of filling plating sufficiently even if the plating is interrupted between electrolytic plating cells. A filling plating system for forming filling plating in a via hole and/or a through hole of a work to be plated, comprising: a plurality of electrolytic plating cells; and an additive adhesion region arranged between each of the plurality of electrolytic plating cells, wherein solution containing one or more kinds of additive selected from at least a leveler comprising nitrogen-containing organic compound, a brightener comprising sulfur-containing organic compound, and a carrier comprising polyether compound, is directly adhered to the work to be plated at the additive adhesion region.