A method of electro-chemical plating is disclosed. The catholyte is delivered to the cathode chamber. The catholyte is controlled at a first temperature before flowing into the cathode chamber. The anolyte is provided at room temperature. The temperature of the anolyte is lowered from the room temperature to a second temperature before delivering into the anode chamber. The second temperature is equal to or lower than the first temperature. The plating surface of the substrate is immersed in the electrolyte. The substrate is biased to a direct current (DC) voltage. The biased substrate attracts ions of the metal in the electrolyte toward the plating surface so as to electroplating the metal onto the substrate.

A method of electro-chemical plating is disclosed. The catholyte is delivered to the cathode chamber. The catholyte is controlled at a first temperature before flowing into the cathode chamber. The anolyte is provided at room temperature. The temperature of the anolyte is lowered from the room temperature to a second temperature before delivering into the anode chamber. The second temperature is equal to or lower than the first temperature. The plating surface of the substrate is immersed in the electrolyte. The substrate is biased to a direct current (DC) voltage. The biased substrate attracts ions of the metal in the electrolyte toward the plating surface so as to electroplating the metal onto the substrate.

A semiconductor manufacturing apparatus according to an embodiment comprises a container contains a mixed solution that includes a processing solution for plating processing of a substrate and an additive and being capable of draining a part of the mixed solution when a first condition is satisfied. A first supplier supplies the processing solution to the container. A second supplier supplies the additive to the container when the first condition is satisfied and drainage of a part of the mixed solution is finished.

A semiconductor manufacturing apparatus according to an embodiment comprises a container contains a mixed solution that includes a processing solution for plating processing of a substrate and an additive and being capable of draining a part of the mixed solution when a first condition is satisfied. A first supplier supplies the processing solution to the container. A second supplier supplies the additive to the container when the first condition is satisfied and drainage of a part of the mixed solution is finished.

Methods for recovering manganese etchant solutions are provided wherein a process solution used to rinse or neutralize a nonconductive substrate after etching the substrate is collected and evaporated to provide a concentrated process solution that is fed back into the manganese etchant solution or acid rinse.

Methods for recovering manganese etchant solutions are provided wherein a process solution used to rinse or neutralize a nonconductive substrate after etching the substrate is collected and evaporated to provide a concentrated process solution that is fed back into the manganese etchant solution or acid rinse.

Methods for recovering manganese etchant solutions are provided wherein a process solution used to rinse or neutralize a nonconductive substrate after etching the substrate is collected and evaporated to provide a concentrated process solution that is fed back into the manganese etchant solution or acid rinse.

There is provided a powder supply apparatus that prevents powder from scattering as much as possible. There is provided the powder supply apparatus that supplies a powder containing a metal used for a plating to a plating solution. This powder supply apparatus includes a plating solution tank, a feed pipe, a gas supply line, and a spiral-air-flow-generating component. The plating solution tank is configured to house the plating solution. The feed pipe is configured to feed the powder into the plating solution tank. The gas supply line is configured to supply a gas. The spiral-air-flow-generating component is configured to receive the gas from the gas supply line to generate a spiral air flow heading toward the plating solution tank inside the feed pipe.

There is provided a powder supply apparatus that prevents powder from scattering as much as possible. There is provided the powder supply apparatus that supplies a powder containing a metal used for a plating to a plating solution. This powder supply apparatus includes a plating solution tank, a feed pipe, a gas supply line, and a spiral-air-flow-generating component. The plating solution tank is configured to house the plating solution. The feed pipe is configured to feed the powder into the plating solution tank. The gas supply line is configured to supply a gas. The spiral-air-flow-generating component is configured to receive the gas from the gas supply line to generate a spiral air flow heading toward the plating solution tank inside the feed pipe.

Methods of refreshing plating solutions containing phosphate anions, refreshed plating solutions, and uses thereof are described. The method may include adding a metal sulfate to the plating solution; precipitating out phosphate anions present in the plating solution with metal ions from the metal sulfate; adding barium carbonate to the plating solution; precipitating sulfate introduced from the metal sulfate added to the plating solution with barium from the barium carbonate; separating insoluble components from the plating solution; and replenishing the plating solution with components originally present in the plating solution.