A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 μg/dm.sup.2 of Ni and said Cr layer containing 10-100 μg/dm.sup.2 of Cr is provided.

The printed circuit board for the memory card includes an insulating layer; a mounting unit formed on a first surface of the insulating layer and electrically connected to a memory device; a terminal unit formed on a second surface of the insulating layer and electrically connected to electronic apparatuses of an outside; and metal layers formed at the mounting unit and the terminal unit and made of the same material.

The printed circuit board for the memory card includes an insulating layer; a mounting unit formed on a first surface of the insulating layer and electrically connected to a memory device; a terminal unit formed on a second surface of the insulating layer and electrically connected to electronic apparatuses of an outside; and metal layers formed at the mounting unit and the terminal unit and made of the same material.

The invention relates to a composition for electrolytic nickel plating. In order to provide an improved composition, it is proposed that it comprises one or a plurality of nickel ion sources and a mono-, di- or tri-hydroxybenzene compound, preferably a hydroquinone compound or the salts thereof or mixtures thereof.

In a deposition method of Ni—P—B system plating film, electroplating is performed in a plating bath containing Ni ions, phosphorous acid ions, alkylamine borane, acetic acid, at least one sort of a primary brightening agent, and a secondary brightening agent including at least one sort of a surface active agent. In the above-mentioned plating bath, concentration of alkylamine borane in said plating bath is 1.37 mmol/L or more, and concentration of acetic acid in said plating bath is 0.70 mol/L or more and less than 2.80 mol/L. Thereby, plating film having high hardness of Hv 700 or more can be deposited with high manufacturing efficiency without baking processing, while reducing occurrence of poor appearance, such as burning and abnormal precipitation, even when current density is increased to 80 A/dm.sup.2 or more to raise deposition rate.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.