A process is provided comprising submerging a substrate in an electrochemical deposit bath having at least a metal salt and saccharin. In embodiments, the film is further treated with anodization, and in other cases chemical vapor deposition. Films are also provided formed by the disclosed processes. The films are nanoporous on at least a portion of a surface of the films. Also disclosed are electronic devices having the films disclosed, including lithium-ion batteries, storage devices, supercapacitors, electrodes, semiconductors, fuel cells, and/or combinations thereof.

A process is provided comprising submerging a substrate in an electrochemical deposit bath having at least a metal salt and saccharin. In embodiments, the film is further treated with anodization, and in other cases chemical vapor deposition. Films are also provided formed by the disclosed processes. The films are nanoporous on at least a portion of a surface of the films. Also disclosed are electronic devices having the films disclosed, including lithium-ion batteries, storage devices, supercapacitors, electrodes, semiconductors, fuel cells, and/or combinations thereof.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A high-strength coatings and methods of fabrication to yield single-crystal-like nickel containing nanotwins and stacking faults.

A high-strength coatings and methods of fabrication to yield single-crystal-like nickel containing nanotwins and stacking faults.

Provided is a copper foil provided with a carrier in which the laser hole-opening properties of the ultrathin copper layer are good and which is suitable for producing a high-density integrated circuit substrate. A copper foil provided with a carrier having, in order, a carrier, an intermediate layer, and an ultrathin copper layer, wherein the specular gloss at 60° in an MD direction of the intermediate layer side surface of the ultrathin copper layer is 140 or less.

Various embodiments herein relate to methods and apparatus for electroplating cobalt on a substrate. In many cases, the cobalt is electroplated into recessed features. The recessed features may include a seed layer such as a cobalt seed layer. Electroplating may occur through a bottom-up mechanism. The bottom-up mechanism may be achieved by using particular additives (e.g., accelerator and suppressor), which may be present in the electrolyte at particular concentrations. Further, leveler, wetting agent, and/or brightening agents may be used to promote high quality plating results. In various embodiments, the substrate is pre-treated to remove oxide (and in some cases carbon impurities) from the seed layer before electroplating takes place. Further, the electrolyte may have a particular conductivity to promote uniform plating results across the face of the substrate.

Various embodiments herein relate to methods and apparatus for electroplating cobalt on a substrate. In many cases, the cobalt is electroplated into recessed features. The recessed features may include a seed layer such as a cobalt seed layer. Electroplating may occur through a bottom-up mechanism. The bottom-up mechanism may be achieved by using particular additives (e.g., accelerator and suppressor), which may be present in the electrolyte at particular concentrations. Further, leveler, wetting agent, and/or brightening agents may be used to promote high quality plating results. In various embodiments, the substrate is pre-treated to remove oxide (and in some cases carbon impurities) from the seed layer before electroplating takes place. Further, the electrolyte may have a particular conductivity to promote uniform plating results across the face of the substrate.

Implementations of the disclosure may include methods of electroplating features formed on a semiconductor device, such as the trenches and vias formed by single or dual Damascene processes using a cobalt plating bath. The cobalt electroplating bath may contain “additive packages” or “additive systems” that include a combination of additives in certain ratios that facilitate the metal filling of high aspect ratio sub-micrometer features. Implementations of the disclosure provide new cobalt plating bath methods and chemistries and that include alkyl modified imidazoles, imidazolines, and imidazolidines suppressor compounds.