An apparatus and method for electrochemically depositing a unitary layer structure using a reactor configured to contain an electrolyte solution with an anode array containing a plurality of independently electrically controllable anodes arranged in a two-dimensional array, a cathode, an addressing circuit for receiving a signal containing anode address data and for outputting a signal causing an anode array pattern; and, a controller, in communication with the addressing circuit and the anode array, configured to electrically control each anode in the anode array to cause an electrochemical reaction at the cathode that deposits a unitary layer structure according to the anode array pattern signal.

An apparatus and method for electrochemically depositing a unitary layer structure using a reactor configured to contain an electrolyte solution with an anode array containing a plurality of independently electrically controllable anodes arranged in a two-dimensional array, a cathode, an addressing circuit for receiving a signal containing anode address data and for outputting a signal causing an anode array pattern; and, a controller, in communication with the addressing circuit and the anode array, configured to electrically control each anode in the anode array to cause an electrochemical reaction at the cathode that deposits a unitary layer structure according to the anode array pattern signal.

Provided is a steel sheet having excellent image clarity after painting, including: carbon (C): 0.001% to 0.03%, silicon (Si): 0.001% to 0.35%, manganese (Mn): 0.05% to 2.2%, phosphorus (P): 0.003% to 0.1%, sulfur (S): 0.001% or 0.025%, aluminum (Al): 0.01% to 0.1%, nitrogen (N): 0.001% to 0.007%, and a remainder of iron (Fe) and inevitable impurities. The microstructure of the steel sheet mainly is ferrite phases. An R-cube texture of a surface layer of the steel sheet is 5% or less by area %.

Provided is a steel sheet having excellent image clarity after painting, including: carbon (C): 0.001% to 0.03%, silicon (Si): 0.001% to 0.35%, manganese (Mn): 0.05% to 2.2%, phosphorus (P): 0.003% to 0.1%, sulfur (S): 0.001% or 0.025%, aluminum (Al): 0.01% to 0.1%, nitrogen (N): 0.001% to 0.007%, and a remainder of iron (Fe) and inevitable impurities. The microstructure of the steel sheet mainly is ferrite phases. An R-cube texture of a surface layer of the steel sheet is 5% or less by area %.

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10.sup.−6/K. A metal oxide layer is then disposed over a surface of the component body.

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10.sup.−6/K. A metal oxide layer is then disposed over a surface of the component body.

This steel sheet for hot stamping includes a base material, an Al—Si alloy plating layer in which the Al content is 75 mass % or more, the Si content is 3 mass % or more and the total of the Al content and the Si content is 95 mass % or more, an Al oxide coating having a thickness of 0 to 20 nm and a Ni plating layer in which the Ni content is more than 90 mass % in this order, the base material has a predetermined chemical composition, the Al—Si alloy plating layer has a thickness of 7 to 148 μm, and the Ni plating layer has a thickness of more than 200 nm and 2500 nm or less.

This steel sheet for hot stamping includes a base material, an Al—Si alloy plating layer in which the Al content is 75 mass % or more, the Si content is 3 mass % or more and the total of the Al content and the Si content is 95 mass % or more, an Al oxide coating having a thickness of 0 to 20 nm and a Ni plating layer in which the Ni content is more than 90 mass % in this order, the base material has a predetermined chemical composition, the Al—Si alloy plating layer has a thickness of 7 to 148 μm, and the Ni plating layer has a thickness of more than 200 nm and 2500 nm or less.

An apparatus and method for plating magnetic cores by periodically transferring a plate directly back and forth between a metal plating environment and an insulation deposit environment. This direct metal to insulation to metal plating is enabled by a nano-scale insulation layer that provides an imperfect coverage of the metal layer while still keeping sufficient insulation to prevent eddy current formation—even during high-frequency current applications. Therefore, this invention enables the practical creation of magnetic cores having layers with widths even under one nanometer and can generate cores having a layer scale that can be varied to suit a variety of uses in the microelectronic industry.

An apparatus and method for plating magnetic cores by periodically transferring a plate directly back and forth between a metal plating environment and an insulation deposit environment. This direct metal to insulation to metal plating is enabled by a nano-scale insulation layer that provides an imperfect coverage of the metal layer while still keeping sufficient insulation to prevent eddy current formation—even during high-frequency current applications. Therefore, this invention enables the practical creation of magnetic cores having layers with widths even under one nanometer and can generate cores having a layer scale that can be varied to suit a variety of uses in the microelectronic industry.