Provided are a dissimilar metal welded body and a method of manufacturing the same, capable of preventing galvanic corrosion in a connection portion between dissimilar metals in the dissimilar metal welded body and of sufficient insulation coating being applied even when the insulation coating is applied to the dissimilar metal welded body. The dissimilar metal welded body includes a first member made of a metal containing aluminum as a main component, a second member made of a metal containing copper as a main component, a welded portion formed by pressure-welding an end face of the first member and an end face of the second member to each other, and a metal film that continuously covers a substantially entire part of the first member and at least a part of the second member. The metal film is a film made of a metal containing copper as a main component.

This steel sheet for hot stamping includes a base material, an Al—Si alloy plating layer in which the Al content is 75 mass % or more, the Si content is 3 mass % or more and the total of the Al content and the Si content is 95 mass % or more, an Al oxide coating having a thickness of 0 to 20 nm and a Ni plating layer in which the Ni content is more than 90 mass % in this order, the base material has a predetermined chemical composition, the Al—Si alloy plating layer has a thickness of 7 to 148 μm, and the Ni plating layer has a thickness of more than 200 nm and 2500 nm or less.

A magnesium alloy composite structure includes a magnesium alloy substrate, a zinc layer applied to the magnesium alloy substrate, a copper layer applied to the zinc layer, a nickel strike layer applied to the copper layer; an autocatalytic nickel layer applied to the nickel strike layer and a surface layer applied to the autocatalytic nickel layer. Various surface layers include Aluminum Titanium Nitride, Boron Nitride, Chromium Nitride, Titanium Nitride, Zirconium Nitride, Zirconium Oxide, Zirconium Oxycarbide, Titanium Carbide, Titanium Nitride and Diamond Like Carbon.

According to one example, preparing a substrate for an electronic device can include forming a deposition layer on a magnesium alloy substrate, anodizing the magnesium alloy substrate, and forming an electrophoretic deposition layer on the anodized magnesium alloy substrate.

A method including: employing pure magnesium or a magnesium alloy as a substrate material, and sanding and cleaning the substrate material; preparing an electrolyte including 0.8-8 mmol/L of Zn.sup.2+, 30-50 mmol/L of Ca.sup.+, 15-35 mmol/L of H.sub.2PO.sub.4.sup., 0-0.5 mol/L of NaNO.sub.3, and 0-0.05 mmol/L of a magnesium ion complexing agent; employing the substrate material as a cathode, a graphite flake as an anode, heating the electrolyte to a temperature of between 60 and 90 C., and synchronously immersing the cathode and the anode into the electrolyte; and implementing an electrochemical deposition method in the electrolyte for between 20 and 60 min.

A method including: employing pure magnesium or a magnesium alloy as a substrate material, and sanding and cleaning the substrate material; preparing an electrolyte including 0.8-8 mmol/L of Zn.sup.2+, 30-50 mmol/L of Ca.sup.+, 15-35 mmol/L of H.sub.2PO.sub.4.sup., 0-0.5 mol/L of NaNO.sub.3, and 0-0.05 mmol/L of a magnesium ion complexing agent; employing the substrate material as a cathode, a graphite flake as an anode, heating the electrolyte to a temperature of between 60 and 90 C., and synchronously immersing the cathode and the anode into the electrolyte; and implementing an electrochemical deposition method in the electrolyte for between 20 and 60 min.

A method for pretreating a substrate prior to depositing a material thereon, the method including immersing the substrate in an activation solution for a predetermined period of time, the activation solution including an ammonium salt that includes a fluorine-containing anion, sulfuric acid and water.

A method for pretreating a substrate prior to depositing a material thereon, the method including immersing the substrate in an activation solution for a predetermined period of time, the activation solution including an ammonium salt that includes a fluorine-containing anion, sulfuric acid and water.

In example implementations, a method for producing a thin film coating is provided. The method includes pre-treating a substrate, placing the substrate in a bath comprising at least phosphoric acid and sulphuric acid to produce a thin anodized layer, rinsing the thin anodized layer in a solution, plating a surface of the thin anodized layer in an electro deposition bath following a plating current profile for a predetermined period, and increasing the plating current to the recommended bath plating current to produce the thin film coating having a desired initial coating thickness.

In example implementations, a method for producing a thin film coating is provided. The method includes pre-treating a substrate, placing the substrate in a bath comprising at least phosphoric acid and sulphuric acid to produce a thin anodized layer, rinsing the thin anodized layer in a solution, plating a surface of the thin anodized layer in an electro deposition bath following a plating current profile for a predetermined period, and increasing the plating current to the recommended bath plating current to produce the thin film coating having a desired initial coating thickness.