The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

A pickling process of a metallic strip is provided including the steps of: passing said metallic strip through at least a pickling bath being at a temperature between 1 and 100° C., applying an alternating current, having a current density of 1x10.sup.2 to 1x10.sup.5 A.m.sup.−2 of unit surface of said metallic strip to said metallic strip passing through said at least one pickling bath.

A pickling process of a metallic strip is provided including the steps of: passing said metallic strip through at least a pickling bath being at a temperature between 1 and 100° C., applying an alternating current, having a current density of 1x10.sup.2 to 1x10.sup.5 A.m.sup.−2 of unit surface of said metallic strip to said metallic strip passing through said at least one pickling bath.

The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

The present invention refers to an electrolytic treatment device having an anodic compartment comprising a non-chromium (VI) etching solution to be treated and immersed therein an anode. The anodic compartment is separated by a membrane from a cathodic compartment comprising a cathodic solution comprising an inorganic acid, wherein the anode and the cathode are used comprising or consisting of a ternary or higher Pb alloy with Sn and at least one further metal selected from the group consisting of Sb, Ag, Co, Bi and combinations thereof. Moreover, a method for etching plastic parts is provided as well.

A rotor for polishing hollow tubes, in which an outer tube is slidable over an inner tube and is provided with at least one window in the wall. At the window on the inner tube, a plate vane is fixed at the base end to an auxiliary shaft arranged perpendicular to the main shaft so as to be able to rotationally move. A link bar is arranged in the main shaft direction to extend between the outer tube and the plate vane. The rotor is able to transition between an initial state (plate vane closed) and an operational state (plate vane open) by the inner tube moving relative to the outer tube. An electrode for electropolishing or a buff for mechanical polishing is fixed to the tip end of the plate vane. This allows for adjustment of the position of the plate vane and control of the polished state.

A rotor for polishing hollow tubes, in which an outer tube is slidable over an inner tube and is provided with at least one window in the wall. At the window on the inner tube, a plate vane is fixed at the base end to an auxiliary shaft arranged perpendicular to the main shaft so as to be able to rotationally move. A link bar is arranged in the main shaft direction to extend between the outer tube and the plate vane. The rotor is able to transition between an initial state (plate vane closed) and an operational state (plate vane open) by the inner tube moving relative to the outer tube. An electrode for electropolishing or a buff for mechanical polishing is fixed to the tip end of the plate vane. This allows for adjustment of the position of the plate vane and control of the polished state.

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.