A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

An insert fixture has a base, a plurality of mounting brackets, and a plurality of separators. The plurality of separators extends vertically from the base and includes a plurality of grid portions extending the length of the insert fixture and a plurality of divider portions, which connect to the plurality of grid portions to form a plurality of individual component holders around one of the plurality of mounting brackets. Each individual component holder has two separated grid portion sections positioned on either side of the bracket. These grid portions have two divider portions which are also separated and positioned either side of the bracket at an angle relative to the two grid portions. The individual component holder forms a cell around the mounting bracket. The insert fixture may be constructed from a molybdenum alloy, lanthanum oxide and/or titanium zirconium molybdenum.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

Disclosed is a method of fabricating a single crystal colloidal monolayer on a substrate. The method includes preparing a pair of adhesive substrates, arranging powder particles between the substrates, and uniaxially rubbing one of the substrates in any one direction to allow the particles to be close-packed between the substrates, thereby forming a single crystal monolayer.

Disclosed is a method of fabricating a single crystal colloidal monolayer on a substrate. The method includes preparing a pair of adhesive substrates, arranging powder particles between the substrates, and uniaxially rubbing one of the substrates in any one direction to allow the particles to be close-packed between the substrates, thereby forming a single crystal monolayer.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.