Provided is a raw material supply unit comprising: a main body having a space into which raw material is filled; a barrier for dividing the main body into two or more areas in the longitudinal direction; a rod extending from above the main body into the interior of same; and a valve, connected to the rod, for covering or exposing the lower portion of the main body, wherein the bottom surface of the main body has a step.

Provided is a raw material supply unit comprising: a main body having a space into which raw material is filled; a barrier for dividing the main body into two or more areas in the longitudinal direction; a rod extending from above the main body into the interior of same; and a valve, connected to the rod, for covering or exposing the lower portion of the main body, wherein the bottom surface of the main body has a step.

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.

A method for growing beta phase of gallium oxide (β-Ga.sub.2O.sub.3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga.sub.2O.sub.3 or at the melting temperature (MT) or after complete melting of the Ga.sub.2O.sub.3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga.sub.2O.sub.3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

A method for growing beta phase of gallium oxide (β-Ga.sub.2O.sub.3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga.sub.2O.sub.3 or at the melting temperature (MT) or after complete melting of the Ga.sub.2O.sub.3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga.sub.2O.sub.3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.