A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×10.sup.17 atoms/cm.sup.3 and not more than 6.5×10.sup.17 atoms/cm.sup.3; a nitrogen concentration per new ASTM of not less than 1.0×10.sup.13 atoms/cm.sup.3 and not more than 1.0×10.sup.14 atoms/cm.sup.3; a front side having a silicon epitaxial layer wherein the semiconductor wafer has BMDs whose mean size is not more than 10 nm determined by transmission electron microscopy and whose mean density adjacent to the epitaxial layer is not less than 1.0×10.sup.11 cm.sup.−3, determined by reactive ion etching after having subjected the wafer covered with the epitaxial layer to a heat treatment at a temperature of 780° C. for a period of 3 h and to a heat treatment at a temperature of 600° C. for a period of 10 h.

A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×10.sup.17 atoms/cm.sup.3 and not more than 6.5×10.sup.17 atoms/cm.sup.3; a nitrogen concentration per new ASTM of not less than 1.0×10.sup.13 atoms/cm.sup.3 and not more than 1.0×10.sup.14 atoms/cm.sup.3; a front side having a silicon epitaxial layer wherein the semiconductor wafer has BMDs whose mean size is not more than 10 nm determined by transmission electron microscopy and whose mean density adjacent to the epitaxial layer is not less than 1.0×10.sup.11 cm.sup.−3, determined by reactive ion etching after having subjected the wafer covered with the epitaxial layer to a heat treatment at a temperature of 780° C. for a period of 3 h and to a heat treatment at a temperature of 600° C. for a period of 10 h.

A system and method for producing a single crystal can prevent calculation and setting mistakes and provide an adequate correction amount in the next batch. A single crystal manufacturing system includes a pulling-up apparatus that calculates a diameter measurement value of a single crystal during a pulling-up process, calculates a first diameter of the single crystal by correcting the diameter measurement value using a diameter correction coefficient, and controls crystal pulling-up conditions based on the first diameter. A diameter measuring apparatus measures a diameter of the single crystal pulled up by the pulling-up apparatus to calculate a second diameter of the single crystal. A database server acquires the first diameter and the second diameter. The database server calculates a correction amount of the diameter correction coefficient from the first and second diameters obtained at diameter measurement positions which coincide with each other under room temperature.

A system and method for producing a single crystal can prevent calculation and setting mistakes and provide an adequate correction amount in the next batch. A single crystal manufacturing system includes a pulling-up apparatus that calculates a diameter measurement value of a single crystal during a pulling-up process, calculates a first diameter of the single crystal by correcting the diameter measurement value using a diameter correction coefficient, and controls crystal pulling-up conditions based on the first diameter. A diameter measuring apparatus measures a diameter of the single crystal pulled up by the pulling-up apparatus to calculate a second diameter of the single crystal. A database server acquires the first diameter and the second diameter. The database server calculates a correction amount of the diameter correction coefficient from the first and second diameters obtained at diameter measurement positions which coincide with each other under room temperature.

A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

A method for growing a single crystal by using a Czochralski technique includes: in a cone process of a single-crystal growth by using the Czochralski technique, acquiring a first parameter corresponding to the single-crystal growth, and inputting the first parameter into a target model, because the target model is constructed by using a second parameter corresponding to the single-crystal growth in a historical cone process and a historical cone growing diameter in a historical cone growing operation, a cone growing diameter outputted by the target model according to the first parameter may be acquired, and then a cone growing operation is performed according to the first parameter and the cone growing diameter. At this point, the target model sufficiently learns from the experience of the historical cone process and the cone growing process.

A method for growing a single crystal by using a Czochralski technique includes: in a cone process of a single-crystal growth by using the Czochralski technique, acquiring a first parameter corresponding to the single-crystal growth, and inputting the first parameter into a target model, because the target model is constructed by using a second parameter corresponding to the single-crystal growth in a historical cone process and a historical cone growing diameter in a historical cone growing operation, a cone growing diameter outputted by the target model according to the first parameter may be acquired, and then a cone growing operation is performed according to the first parameter and the cone growing diameter. At this point, the target model sufficiently learns from the experience of the historical cone process and the cone growing process.

An apparatus for controlling a thickness of a crystalline ribbon grown on a surface of a melt includes a crucible configured to hold a melt; a cold initializer facing an exposed surface of the melt; a segmented cooled thinning controller disposed above the crucible on a side of the crucible with the cold initializer; and a uniform melt-back heater disposed below of the crucible opposite the cooled thinning controller. Heat is applied to the ribbon through the melt using a uniform melt-back heater disposed below the melt. Cooling is applied to the ribbon using a segmented cooled thinning controller facing the crystalline ribbon above the melt.

An apparatus for controlling a thickness of a crystalline ribbon grown on a surface of a melt includes a crucible configured to hold a melt; a cold initializer facing an exposed surface of the melt; a segmented cooled thinning controller disposed above the crucible on a side of the crucible with the cold initializer; and a uniform melt-back heater disposed below of the crucible opposite the cooled thinning controller. Heat is applied to the ribbon through the melt using a uniform melt-back heater disposed below the melt. Cooling is applied to the ribbon using a segmented cooled thinning controller facing the crystalline ribbon above the melt.

A heat exchanging device includes: an inner wall and an outer wall, wherein the inner wall is close to the center axis of the heat exchanging device. The inner wall and the outer wall together form a chamber for a cooling medium to flow. The inner wall is provided with at least one protrusion component having an internal cavity. The protruding direction of the protrusion component faces the center axis. The internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall. The protruding direction of the protrusion component faces the crystal bar, and the internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall, which increases the heat exchanging area, and reduces the horizontal distance between the cooling medium and the crystal bar.