A crystal support for a crystal pulling system includes two catches that have a respective retaining jaw that is placeable against a thickened neck portion of a crystal. The two catches are moveable into a bearing position in which the two catches bear on the thickened neck portion and into a releasing position in which the two catches are away from the thickened neck portion. In the bearing position, respective contact points of each retaining jaw at which the retaining jaws bear on the thickened neck portion are located on respective sides of a parting plane. The parting plane extends at an angle to at least one of the pivot axes of the catches and, in the bearing position, the respective contact points of each retaining jaw are located on both sides of a crystal plane that extends through an axis of the crystal and parallel to the pivot axes.

A crystal support for a crystal pulling system includes two catches that have a respective retaining jaw that is placeable against a thickened neck portion of a crystal. The two catches are moveable into a bearing position in which the two catches bear on the thickened neck portion and into a releasing position in which the two catches are away from the thickened neck portion. In the bearing position, respective contact points of each retaining jaw at which the retaining jaws bear on the thickened neck portion are located on respective sides of a parting plane. The parting plane extends at an angle to at least one of the pivot axes of the catches and, in the bearing position, the respective contact points of each retaining jaw are located on both sides of a crystal plane that extends through an axis of the crystal and parallel to the pivot axes.

A crystal growing system includes a rotating seed lift assembly to rotate and lift a seed crystal supported by a cable. The seed lift assembly includes a spool that rotates to wrap the cable around the spool, thus raising the cable. As the spool rotates, it moves in an axial direction to avoid displacing the cable in the axial direction. Movement of the spool and rotation of the seed lift assembly induce deviations in the center of mass of the seed lift assembly with respect to its axis of rotation, which can cause undesired movement of the cable and thus seed crystal. A dynamic counterweight system makes use of one or more sensors to detect movement of the seed lift assembly and dynamically control a motor-driven, movable counterweight to offset these deviations, thus maintaining the center of mass at or substantially in line with the axis of rotation.

A crystal growing system includes a rotating seed lift assembly to rotate and lift a seed crystal supported by a cable. The seed lift assembly includes a spool that rotates to wrap the cable around the spool, thus raising the cable. As the spool rotates, it moves in an axial direction to avoid displacing the cable in the axial direction. Movement of the spool and rotation of the seed lift assembly induce deviations in the center of mass of the seed lift assembly with respect to its axis of rotation, which can cause undesired movement of the cable and thus seed crystal. A dynamic counterweight system makes use of one or more sensors to detect movement of the seed lift assembly and dynamically control a motor-driven, movable counterweight to offset these deviations, thus maintaining the center of mass at or substantially in line with the axis of rotation.

An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.

An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.

A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

A single-crystal manufacturing apparatus including: main chamber accommodating crucible and heater; pull chamber wherein a grown single-crystal is received; gas-flow guiding cylinder that has opening through which the single-crystal passes and extends downward from ceiling of main chamber; seed chuck configured to hold a seed crystal; and heat insulation plate that is level with lower end of the opening of gas-flow guiding cylinder when raw material is heated and melted, and pulled together with the seed crystal when single-crystal is pulled. The seed chuck includes a mounting fixture to mount heat insulation plate. Mounting fixture has a mechanism allowing heat insulation plate to be mounted so the heat insulation plate can be rotated independently of the rotation of the seed chuck. This apparatus can be readily introduced, melt raw material with low heater power; inhibit occurrence of dislocation during seeding and generation of dislocation in single-crystal when single-crystal is pulled.

A single-crystal manufacturing apparatus including: main chamber accommodating crucible and heater; pull chamber wherein a grown single-crystal is received; gas-flow guiding cylinder that has opening through which the single-crystal passes and extends downward from ceiling of main chamber; seed chuck configured to hold a seed crystal; and heat insulation plate that is level with lower end of the opening of gas-flow guiding cylinder when raw material is heated and melted, and pulled together with the seed crystal when single-crystal is pulled. The seed chuck includes a mounting fixture to mount heat insulation plate. Mounting fixture has a mechanism allowing heat insulation plate to be mounted so the heat insulation plate can be rotated independently of the rotation of the seed chuck. This apparatus can be readily introduced, melt raw material with low heater power; inhibit occurrence of dislocation during seeding and generation of dislocation in single-crystal when single-crystal is pulled.