This disclosure provides a hydrogen storing alloy and a production method thereof. The hydrogen storing alloy has a chemical composition of a general formula R.sub.(1-x)Mg.sub.xNi.sub.y, wherein R is one or more elements selected from rare earth elements comprising Y, x satisfies 0.05≦x≦0.3, and y satisfies 2.8≦y≦3.8. The ratio of the maximal peak intensity present in a range of 2θ=31°-33° to the maximal peak intensity present in a range of 2θ=41°-44° is 0.1 or less (including 0), as measured by X-ray diffraction in which a Cu-Kα ray is set as an X-ray source.

This disclosure provides a hydrogen storing alloy and a production method thereof. The hydrogen storing alloy has a chemical composition of a general formula R.sub.(1-x)Mg.sub.xNi.sub.y, wherein R is one or more elements selected from rare earth elements comprising Y, x satisfies 0.05≦x≦0.3, and y satisfies 2.8≦y≦3.8. The ratio of the maximal peak intensity present in a range of 2θ=31°-33° to the maximal peak intensity present in a range of 2θ=41°-44° is 0.1 or less (including 0), as measured by X-ray diffraction in which a Cu-Kα ray is set as an X-ray source.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.

A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.

A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve