According to one embodiment, a scintillator includes a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and a second layer provided on the first layer and including thallium activated cesium iodide. The second layer includes crystals having a [100] orientation partially diverted from a direction perpendicular to the surface of the substrate. Half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

The present disclosure provides a method for preparing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

The disclosure relates to large area single crystal diamond (SCD) surfaces and substrates, and their methods of formation. Typical large area substrates can be at least about 25 mm, 50 mm, or 100 mm in diameter or square edge length, and suitable thicknesses can be about 100 m to 1000 m. The large area substrates have a high degree of crystallographic alignment. The large area substrates can be used in a variety of electronics and/or optics applications. Methods of forming the large area substrates generally include lateral and vertical growth of SCD on spaced apart and crystallographically aligned SCD seed substrates, with the individual SCD growth layers eventually merging to form a composite SCD layer of high quality and high crystallographic alignment. A diamond substrate holder can be used to crystallographically align the SCD seed substrates and reduce the effect of thermal stress on the formed SCD layers.

A cyclical epitaxial deposition system is provided. The cyclical epitaxial deposition system includes a deposition chamber, a conveyance device, and a gas distribution module. The conveyance device is used to continuously convey a substrate to pass through the deposition chamber along a conveyance path.

The gas distribution module is disposed in the deposition chamber and located above the conveyance path. The gas distribution module includes a plurality of precursor gas nozzles and purge gas nozzles that are not in communication with one another so as to guide at least one precursor gas and at least one purge gas to different regions of the substrate at the same time.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber

Aspects of the disclosure relate to processes for epitaxial growth of III-V compound of (Al)GaInP material at high rates, such as about 8 m/hr, 10 m/hr, 20 m/hr, 30 m/hr, 40 m/hr, and 8-120 m/hr deposition rates. The high growth-rate deposited (Al)InGaP materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a chemical vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium aluminum indium phosphide, gallium indium phosphide, derivatives thereof, alloys thereof, or combinations thereof.

According to one embodiment, a scintillator includes a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and a second layer provided on the first layer and including thallium activated cesium iodide. The second layer includes crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate. Half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.