A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber.

The present disclosure discloses a reaction chamber, including a chamber body, the chamber body being connected to an upper cover by an insulation member, the chamber body and the upper cover forming an inner chamber, and the upper cover being provided with a through-hole that is communicated with the inner chamber; a gas inlet mechanism including an insulation body at least partially arranged in the through-hole, a gas inlet channel being arranged in the insulation body, a flange part being arranged on one side of the insulation body facing away from the inner chamber, the flange part being grounded and configured to communicate a gas inlet end of the gas inlet channel with a gas output end of a gas inlet pipe configure to transfer a reaction gas, a gas outlet end of the gas inlet channel being communicated with the inner chamber, the gas inlet channel including at least two channel segments, which are sequentially communicated in an axial direction of the through-hole, and orthographic projections of any two adjacent channel segments on a plane perpendicular to the axial direction of the through-hole being staggered from each other. The present solution solves the problem that accidental sparking is easy to occur in an existing reaction chamber.

The present disclosure discloses a reaction chamber, including a chamber body, the chamber body being connected to an upper cover by an insulation member, the chamber body and the upper cover forming an inner chamber, and the upper cover being provided with a through-hole that is communicated with the inner chamber; a gas inlet mechanism including an insulation body at least partially arranged in the through-hole, a gas inlet channel being arranged in the insulation body, a flange part being arranged on one side of the insulation body facing away from the inner chamber, the flange part being grounded and configured to communicate a gas inlet end of the gas inlet channel with a gas output end of a gas inlet pipe configure to transfer a reaction gas, a gas outlet end of the gas inlet channel being communicated with the inner chamber, the gas inlet channel including at least two channel segments, which are sequentially communicated in an axial direction of the through-hole, and orthographic projections of any two adjacent channel segments on a plane perpendicular to the axial direction of the through-hole being staggered from each other. The present solution solves the problem that accidental sparking is easy to occur in an existing reaction chamber.

The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lowerly positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426 B) thereof at least a protrusion (428 A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.

The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lowerly positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426 B) thereof at least a protrusion (428 A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.