A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.

A method of producing an epitaxial silicon wafer, including: loading a wafer into a chamber; performing epitaxial growth; unloading the epitaxial silicon wafer from the chamber; and then cleaning the inside of the chamber using hydrochloric gas. After the cleaning is performed, whether components provided in the chamber are to be replaced or not is determined based on the cumulative amount of the hydrochloric gas supplied. The components have a base material that includes graphite and is coated with a silicon carbide film.

A method of producing an epitaxial silicon wafer, including: loading a wafer into a chamber; performing epitaxial growth; unloading the epitaxial silicon wafer from the chamber; and then cleaning the inside of the chamber using hydrochloric gas. After the cleaning is performed, whether components provided in the chamber are to be replaced or not is determined based on the cumulative amount of the hydrochloric gas supplied. The components have a base material that includes graphite and is coated with a silicon carbide film.

A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron in the center of the epitaxial layer is less than 5.0×10.sup.12 cm.sup.−3.

A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×10.sup.14 cm.sup.−3 at any position in the plane of the epitaxial layer.

A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber.

In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.

In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.

Provided are a bearing system and a power control method for a bearing device. The bearing system comprises a susceptor; a rotating shaft fixed under the susceptor, where the rotating shaft and the susceptor rotate synchronously; a heating wire located under the susceptor, where the heating wire comprises n heating wire units arranged in a circumferential direction of the susceptor, n≥2, and temperature of each of the heating wire units is independently controlled; and a power controller configured to: during rotation of the susceptor, control at least one of: a power of a heating wire unit directly under a down end of the susceptor to be less than a power of each of other heating wire units, or a power of a heating wire unit directly under an up end of the susceptor to be greater than a power of each of other heating wire units.

Provided are a bearing system and a power control method for a bearing device. The bearing system comprises a susceptor; a rotating shaft fixed under the susceptor, where the rotating shaft and the susceptor rotate synchronously; a heating wire located under the susceptor, where the heating wire comprises n heating wire units arranged in a circumferential direction of the susceptor, n≥2, and temperature of each of the heating wire units is independently controlled; and a power controller configured to: during rotation of the susceptor, control at least one of: a power of a heating wire unit directly under a down end of the susceptor to be less than a power of each of other heating wire units, or a power of a heating wire unit directly under an up end of the susceptor to be greater than a power of each of other heating wire units.