A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.

A lithium metal negative electrode for an electrochemical cell for a secondary lithium metal battery includes a polycrystalline metal substrate having a major facing surface with a defined crystallographic texture. An epitaxial lithium metal layer is formed on the major facing surface of the polycrystalline metal substrate. The epitaxial lithium metal layer exhibits a predominant crystal orientation. The predominant crystal orientation of the epitaxial lithium metal layer is derived from the defined crystallographic texture of the major facing surface of the polycrystalline metal substrate.

A lithium metal negative electrode for an electrochemical cell for a secondary lithium metal battery includes a polycrystalline metal substrate having a major facing surface with a defined crystallographic texture. An epitaxial lithium metal layer is formed on the major facing surface of the polycrystalline metal substrate. The epitaxial lithium metal layer exhibits a predominant crystal orientation. The predominant crystal orientation of the epitaxial lithium metal layer is derived from the defined crystallographic texture of the major facing surface of the polycrystalline metal substrate.

An electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation. The bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 μm in the long axis direction and a length of 20 nm to 2 μm in the short axis direction. The bamboo-like copper crystal particles have a uniform particle size, and the electroplating copper layer has a major diffraction peak at a 2θ angle of about 44°.

An electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation. The bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 μm in the long axis direction and a length of 20 nm to 2 μm in the short axis direction. The bamboo-like copper crystal particles have a uniform particle size, and the electroplating copper layer has a major diffraction peak at a 2θ angle of about 44°.

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

The present invention provides a silver-plated member with a surface layer made of a silver-plating layer being formed on a base member, wherein a crystal plane of the surface layer has a {110} plane preferential orientation, and the orientation proportion of the {110} plane is 30% or more and 75% or less.

The present invention provides a silver-plated member with a surface layer made of a silver-plating layer being formed on a base member, wherein a crystal plane of the surface layer has a {110} plane preferential orientation, and the orientation proportion of the {110} plane is 30% or more and 75% or less.

An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.