The present invention provides a low-dimensional perovskite-structured metal halide and a preparation method and application thereof. The general formulas of the compositions of the low-dimensional perovskite-structured metal halide are AB.sub.2X.sub.3, A.sub.2BX.sub.3, and A.sub.3B.sub.2X.sub.5; wherein, A is at least one of Li, Na, K, Rb, Cs, In, and Tl; B is at least one of Cu, Ag, and Au; and X is at least one of F, Cl, Br, and I.

The present invention provides a low-dimensional perovskite-structured metal halide and a preparation method and application thereof. The general formulas of the compositions of the low-dimensional perovskite-structured metal halide are AB.sub.2X.sub.3, A.sub.2BX.sub.3, and A.sub.3B.sub.2X.sub.5; wherein, A is at least one of Li, Na, K, Rb, Cs, In, and Tl; B is at least one of Cu, Ag, and Au; and X is at least one of F, Cl, Br, and I.

Scintillators that can support up to 20 MHz count rates, which is significantly faster than the required 100K counts/second needed for single crystal diffractometers and methods for fabricating them.

Scintillators that can support up to 20 MHz count rates, which is significantly faster than the required 100K counts/second needed for single crystal diffractometers and methods for fabricating them.

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack.

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack.

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

A gas turbine engine component having a substrate; a thermal barrier coating on the substrate having a porous microstructure; and a reflective layer conforming to the porous microstructure of the thermal barrier coating, wherein the reflective layer comprises a conforming nanolaminate defined by alternating layers of platinum group metal materials selected from the group consisting of platinum group metal-based alloys, platinum group metal intermetallic compounds, mixtures of platinum group metal with metal oxides and combinations thereof. A capping layer can be added over the reflective layer. A supporting layer can be added between the reflective layer and the thermal barrier coating. A process is also disclosed.