A formulation containing particulate matter including nanometric metallic copper particles, at least 10% of the particulate matter being single-crystal metallic copper particles, the particulate matter having an average secondary particle size (d.sub.50) within a range of 20 to 200 nanometers, the nanometric metallic copper particles being at least partially covered by at least one dispersant; a concentration ratio of crystalline cuprous oxide particles to the nanometric metallic copper particles, within the particulate matter, being at most 0.4; the formulation including a solvent, the particulate matter and the solvent forming a dispersion.

A formulation containing particulate matter including nanometric metallic copper particles, at least 10% of the particulate matter being single-crystal metallic copper particles, the particulate matter having an average secondary particle size (d.sub.50) within a range of 20 to 200 nanometers, the nanometric metallic copper particles being at least partially covered by at least one dispersant; a concentration ratio of crystalline cuprous oxide particles to the nanometric metallic copper particles, within the particulate matter, being at most 0.4; the formulation including a solvent, the particulate matter and the solvent forming a dispersion.

An ultra-hard carbon film is formed by the uniaxial compression of thin films of graphene. The graphene films are two or three layers thick (2-L or 3-L). High pressure compression forms a diamond-like film and provides improved properties to the coated substrates.

An ultra-hard carbon film is formed by the uniaxial compression of thin films of graphene. The graphene films are two or three layers thick (2-L or 3-L). High pressure compression forms a diamond-like film and provides improved properties to the coated substrates.

The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).