The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre.

The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre.

Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.

Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.

A method for manufacturing a blade with a first portion and a second portion, the method includes forming the first portion that includes forming a model of the first portion from removable material, forming a first shell mould from the model of the first portion, and forming the single-crystal or columnar first portion m a first metal alloy in the first shell mould from a single-crystal seed, and forming the second portion in which the second portion is formed on the first portion, and in which the first portion and the second portion are made from different materials, the second portion being polycrystalline and formed from a second metal alloy. The blade includes a single-crystal or columnar first portion made from a first metal alloy and a polycrystalline second portion made from the second metal alloy different from the first metal alloy.

A device for creating a fragment model from a crystal model is equipped with a division position identifying section adapted for identifying multiple division atom pairs for multiple atoms contained in the crystal model. The atoms in the division atom pairs are contained in different fragment models. The device is additionally equipped with a model creating section adapted for identifying each of multiple atom groups each composed of atoms bonded to each other in the crystal model and for creating fragment models respectively corresponding to the identified atom groups.

A furnace for electromagnetic casting a tubular-shaped silicon ingot is provided. The furnace includes a mold, outer and inner induction coils and a support member. The mold includes an outer crucible and an inner crucible. The outer crucible is annular-shaped. The inner crucible is disposed in the outer crucible and spaced away from the outer crucible to provide a gap between the inner crucible and the outer crucible. The mold is configured to receive granular silicon in the gap. The outer induction coil disposed around the outer crucible. The inner induction coil disposed in the inner crucible. The outer induction coil and the inner induction coil are configured to heat and melt the granular silicon in the mold to form a tubular-shaped silicon ingot. The support member is configured to hold and move a seed relative to the mold during formation of the tubular-shaped silicon ingot on the seed.

The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: —providing a single crystalline diamond substrate or layer; —providing a first adhesion layer on the substrate or layer; —providing a second adhesion layer on the first adhesion layer: —providing a mask layer on the second adhesion layer; —forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and—etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.

The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: —providing a single crystalline diamond substrate or layer; —providing a first adhesion layer on the substrate or layer; —providing a second adhesion layer on the first adhesion layer: —providing a mask layer on the second adhesion layer; —forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and—etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,