Patent classifications
C
CHEMISTRY; METALLURGY
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C30
CRYSTAL GROWTH
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C30B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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31/00
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
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C30B31/06
by contacting with diffusion material in the gaseous state
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C30B31/10
Reaction chambers; Selection of materials therefor
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C30B31/103
Mechanisms for moving either the charge or heater
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C30B31/103

WAFER BOAT STRUCTURE, AS WELL AS WAFER BOAT ASSEMBLY AND DIFFUSION FURNACE WITH SAME
20220148899 · 2022-05-12 ·

A wafer boat structure as well as a wafer boat assembly and a diffusion furnace with the wafer boat structure are provided. The wafer boat structure includes a supporting frame and a wafer supporting part. The supporting frame includes an upper supporting member and a lower supporting member. A plurality of supporting rods are arranged between the upper supporting member and the lower supporting member. An opening for access of wafers is formed between each two adjacent supporting rods. The wafer supporting part is arranged on the supporting rods for supporting the wafer. The wafer supporting part comprises a supporting plate and at least one wafer board. The wafer board is arranged on the inner side of the supporting rod so as to support the edge of the wafer.