Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.

The invention relates to a method for drying a chamber comprising a predominantly protective-gas atmosphere in the chamber under positive pressure, which has an operating pressure p1 and a predetermined minimum pressure p.sub.min, wherein the minimum pressure p.sub.min of the gas chamber is monitored and the operating pressure p1 is greater than the minimum pressure p.sub.min, wherein the method comprises the following steps: a) removing of a partial quantity Vi of the protective gas from the chamber, wherein the partial quantity Vi is equivalent to the pressure differential p, which is smaller or equal to the differential between p1 and p.sub.min, b) introducing a partial quantity V2 of a dry or dried protective gas into the gas chamber up to a gas pressure p2, which is greater than p.sub.min and c) repeating method steps a) and b) after a predetermined waiting time t. The invention further relates to an arrangement for carrying out the method.

Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.

Provided herein are methods for the removal of organic solvents from wet bagasse. The use of the methods result in dried bagasse that contains no more than 1 weight percent organic solvents.

When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.

When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.

The invention relates to a method for drying a chamber comprising a predominantly protective-gas atmosphere in the chamber under positive pressure, which has an operating pressure p1 and a predetermined minimum pressure p.sub.min, wherein the minimum pressure p.sub.min of the gas chamber is monitored and the operating pressure p1 is greater than the minimum pressure p.sub.min, wherein the method comprises the following steps: a) removing of a partial quantity Vi of the protective gas from the chamber, wherein the partial quantity Vi is equivalent to the pressure differential p, which is smaller or equal to the differential between p1 and p.sub.min, b) introducing a partial quantity V2 of a dry or dried protective gas into the gas chamber up to a gas pressure p2, which is greater than p.sub.min and c) repeating method steps a) and b) after a predetermined waiting time t. The invention further relates to an arrangement for carrying out the method.

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

Provided herein are methods for the removal of organic solvents from wet bagasse. The use of the methods result in dried bagasse that contains no more than 1 weight percent organic solvents.