A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.

A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.

A machine for applying spouts to containers includes a heating tunnel for heating spouts, and a conveyor for conveying spouts through the heating tunnel for heating. The conveyor is a loop conveyor including a plurality of spout holding rack assemblies mounted thereon, wherein the loop conveyor defines a conveyor path from a spout loading zone, through the heating tunnel and then back to the spout loading zone. The machine includes (i) multi-material warp resistant rack holding assemblies, and/or (ii) a spout infeed track at a spout infeed side of the conveyor that includes an adjustment assembly for permitting adjustment of a number of spouts fed from the spout infeed track into an aligned spout holding rack assembly, and/or (iii) a spout emptying passage at a spout outfeed side of the conveyor, and/or (iv) a controller configured to track the position of each spout holding rack assembly along the conveyor path.

A machine for applying spouts to containers includes a heating tunnel for heating spouts, and a conveyor for conveying spouts through the heating tunnel for heating. The conveyor is a loop conveyor including a plurality of spout holding rack assemblies mounted thereon, wherein the loop conveyor defines a conveyor path from a spout loading zone, through the heating tunnel and then back to the spout loading zone. The machine includes (i) multi-material warp resistant rack holding assemblies, and/or (ii) a spout infeed track at a spout infeed side of the conveyor that includes an adjustment assembly for permitting adjustment of a number of spouts fed from the spout infeed track into an aligned spout holding rack assembly, and/or (iii) a spout emptying passage at a spout outfeed side of the conveyor, and/or (iv) a controller configured to track the position of each spout holding rack assembly along the conveyor path.

A rotary hearth furnace includes: a furnace body which surrounds a ring-like space; a hearth portion which forms a bottom portion of the ring-like space and is rotatable in the rotational direction; a gas exhaust portion which discharges an exhaust gas generated in the ring-like space to the outside of the furnace body; an introducing portion; and a flow rate regulating portion. The introducing portion is disposed upstream of the gas exhaust portion in the rotational direction and introduces a pressure regulating gas into a non-heating section of the ring-like space. The flow rate regulating portion is disposed between the introducing portion and the gas exhaust portion and regulates a flow rate of a gas by adjusting an opening area of the non-heating section.

A rotary hearth furnace includes: a furnace body which surrounds a ring-like space; a hearth portion which forms a bottom portion of the ring-like space and is rotatable in the rotational direction; a gas exhaust portion which discharges an exhaust gas generated in the ring-like space to the outside of the furnace body; an introducing portion; and a flow rate regulating portion. The introducing portion is disposed upstream of the gas exhaust portion in the rotational direction and introduces a pressure regulating gas into a non-heating section of the ring-like space. The flow rate regulating portion is disposed between the introducing portion and the gas exhaust portion and regulates a flow rate of a gas by adjusting an opening area of the non-heating section.

A machine for applying spouts to containers includes a heating tunnel for heating spouts, and a conveyor for conveying spouts through the heating tunnel for heating. The conveyor is a loop conveyor including a plurality of spout holding rack assemblies mounted thereon, wherein the loop conveyor defines a conveyor path from a spout loading zone, through the heating tunnel and then back to the spout loading zone. The machine includes (i) multi-material warp resistant rack holding assemblies, and/or (ii) a spout infeed track at a spout infeed side of the conveyor that includes an adjustment assembly for permitting adjustment of a number of spouts fed from the spout infeed track into an aligned spout holding rack assembly, and/or (iii) a spout emptying passage at a spout outfeed side of the conveyor, and/or (iv) a controller configured to track the position of each spout holding rack assembly along the conveyor path.

A machine for applying spouts to containers includes a heating tunnel for heating spouts, and a conveyor for conveying spouts through the heating tunnel for heating. The conveyor is a loop conveyor including a plurality of spout holding rack assemblies mounted thereon, wherein the loop conveyor defines a conveyor path from a spout loading zone, through the heating tunnel and then back to the spout loading zone. The machine includes (i) multi-material warp resistant rack holding assemblies, and/or (ii) a spout infeed track at a spout infeed side of the conveyor that includes an adjustment assembly for permitting adjustment of a number of spouts fed from the spout infeed track into an aligned spout holding rack assembly, and/or (iii) a spout emptying passage at a spout outfeed side of the conveyor, and/or (iv) a controller configured to track the position of each spout holding rack assembly along the conveyor path.

A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.

A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.