A method and apparatus for improving film growth uniformity on a semiconductor substrate. The film growth uniformity is improved by adjusting the amount of power provided to the substrate by spot heaters as the substrate is rotated. Therefore, the amount of power provided to the substrate by the spot heaters changes as the portion of the substrate being heated by spot heater changes. The change in power provided by the spot heater is dependent on a temperature correction factor applied by the controller.

A substrate processing apparatus includes a bake chamber, a chamber door that opens and closes an opening of the bake chamber, a first support plate in the bake chamber, a first partition wall, which partitions a space provided on the first support plate into first heat treatment spaces spaced apart from each other in a first horizontal direction, and extends in a second horizontal direction and a vertical direction, first heat treatment modules arranged in the first heat treatment spaces, a first exhaust duct extending in the first horizontal direction across the first heat treatment spaces, a first sealing bracket coupled to the first exhaust duct, a first horizontal packing configured to seal a gap between the first sealing bracket and the chamber door, and a first vertical packing configured to seal a gap between the first partition wall and the chamber door.

The present application discloses a diffusion furnace, including: a furnace tube structure including a furnace tube body and a furnace bottom, a bottom of the furnace tube body being connected to the furnace bottom to form a reaction chamber; and a carrying structure including a pedestal and a plurality of cassettes disposed on the pedestal, the pedestal being disposed on the furnace bottom. By disposing the plurality of the cassettes, a height of the furnace tube body can be decreased and a width of the furnace tube body can be increased, thus enlarging a space of equipment repair and maintenance, which is favorable for the repair and maintenance of the equipment.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

A support device that has a central axis and includes three uprights extending substantially parallel to the central axis, a plurality of series of support members spaced along the central axis, each series of support members comprising three support members adapted to support one wafer of the plurality of wafers and extending in different essentially longitudinal directions transverse to the central axis, each support member being mounted directly on a separate upright, this support device being remarkable in that the directions of the three support members of each series of support members are concurrent at a point on the central axis.

A wafer baking apparatus includes a chamber including a processing space, and a wafer heater disposed in the processing space and configured to support a wafer. The wafer heater includes a first heating plate, a heating resistance pattern disposed on a lower surface of the first heating plate, a second heating plate disposed on the first heating plate, and a heat dispersion layer interposed between the first and second heating plates and having thermal conductivity lower than a thermal conductivity of materials of the first and second heating plates.

An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. The infrared heating elements are arranged in a nested configuration so as to define individually controllable inner, middle and outer heating zones adjacent a disc-shaped article when positioned on the spin chuck.