A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

A surface profiler comprises at least one front support wheel and at least one rear support wheel for travelling along the surface of a profile to be measured, the rotational axes of said wheels being longitudinally spaced and collinear. A frame carried on the support wheels carries at least one inclinometer, and may also carry a first optical encoder to measure distance travelled. A subframe carried on at least two subframe wheels is pivotally coupled to the frame between the support wheels using a parallelogram linkage. The subframe support wheels are collinear with each other and with the support wheels. A second optical encoder measures the angle between the frame and the subframe. Incremental measurements of inclination angle provided by the inclinometer and the angle between the frame and the subframe, produce a series of elevations representing the surface profile.

Methods and apparatus for processing a substrate are provided. For example, metrology apparatus configured for use with a substrate processing platform comprise an interferometer configured to obtain a first set of measurements at a first set of points along a surface of a substrate, a sensor configured to obtain a second set of measurements at a second set of points different from the first set of points along the surface of the substrate, an actuator configured to position the interferometer and the sensor at various positions along a measurement plane parallel to the surface of the substrate for obtaining the first set of measurements and the second set of measurements, and a substrate support comprising a substrate support surface for supporting the substrate beneath the measurement plane while obtaining the first set of measurements and the second set of measurements.

A method that quantifies the surface flatness of 3D point cloud data in which a test statistic is proposed to indicate the surface flatness based on the threshold of the allowed bump level, the confidence level of test statistics and data density. The method comprises steps of converting the LIDAR measured points to coordinates along the axes using the principal component analysis (PCA) technique; calculating a Z.sub.α value based on the coordinates and predetermined bump tolerance: comparing the Z.sub.α value with a Z score of a test statistic to perform a null hypothesis; and rejecting the null hypothesis when the Z.sub.α value is greater than the Z score.

Provided are a surface inspection device that evaluates a shape of a molded product with high accuracy in a shorter time than in the related art, a shape correction device, a surface inspection method, and a shape correction method. A point measurement sensor 201 that measures each of positions of predetermined points 102 set on a surface of an inspection target 101; a surface measurement sensor 202 that measures a shape of a predetermined surface 103 including the plurality of predetermined points 102 by simultaneously measuring positions of a plurality of points of the inspection target 101; and a deformation amount computation unit 3 that obtains an amount of deformation of the inspection target 101 from a reference shape based on the positions of the predetermined points 102 measured by the point measurement sensor 201 and a normal direction of the predetermined surface 103 measured by the surface measurement sensor 202 are included.

An analysis apparatus includes an acquisition part that acquires a plurality of interference images based on lights having a plurality of different wavelengths from an interference measurement apparatus, a removing part that outputs an interference component by removing a non-interference component included in an interference signal for each pixel in the plurality of the interference images, a conversion part that generates an analysis signal by performing a Hilbert transformation on the interference component, and a calculation part that calculates a distance between a reference surface and a surface of an object to be measured by specifying a phase gradient of a wavelength of light radiated onto the reference surface and the surface of the object to be measured on the basis of the interference component and the analysis signal.

An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.

A surveying system comprises a height measuring device and a high-low measuring device. The high-low measuring device comprises an object measured by the height measuring device, a distance measurement sensor which is provided in a known relationship with the object and measures a distance to a construction surface, a projecting device for projecting a high-low information, and an arithmetic control module, the arithmetic control module calculates a high-low information of the construction surface based on a height information of the object measured by the height measuring device and a distance information measured by the distance measurement sensor, and the projecting device projects the high-low information onto the construction surface.

Some embodiments of the disclosure provide a flatness detection device. In an embodiment, the flatness detection device includes a back plate, an electromagnet, a cross beam, a probe, and a limiting frame. The limiting frame and the electromagnet are provided side by side on the back plate. The cross beam is located above the limiting frame and the electromagnet. The probe vertically penetrates the cross beam and the limiting frame. A spring is provided between the cross beam and the electromagnet. The spring is movable in a vertical direction by a guide, the movement being at least one of compression and extension.

A welding quality processing method and device, and a circuit board. The method includes: obtaining warpage data of each circuit board layer in a multi-layer circuit board under a preset welding temperature change curve; performing simulation according to a stacked state of the multi-layer circuit board and the warpage data to generate a warpage level of each region in the multi-layer circuit board in the stacked state; and processing the multi-layer circuit board according to the warpage level.