A system counts photon interactions in an array of photosensitive diodes and addresses the issue of improving position resolution. Every photo-detector diode of the array is connected to a readout unit cell containing a high-gain charge-to-voltage amplifier, a shaper, at least two comparators with independent thresholds and at least one interpixel communication logic, receiving as input signals from comparator outputs of the same readout unit cell and of the neighboring readout unit cells. This logic is then connected to at least one counter, each counter followed by a counter readout. By means of the digital interpixel communication logic and the set of comparators with different thresholds in every readout unit cell, it is possible to determine the photon hit position in the detector with a higher position resolution than the physical photo-detector size including the removal of the corner effect in pixel detectors.

A system counts photon interactions in an array of photosensitive diodes and addresses the issue of improving position resolution. Every photo-detector diode of the array is connected to a readout unit cell containing a high-gain charge-to-voltage amplifier, a shaper, at least two comparators with independent thresholds and at least one interpixel communication logic, receiving as input signals from comparator outputs of the same readout unit cell and of the neighboring readout unit cells. This logic is then connected to at least one counter, each counter followed by a counter readout. By means of the digital interpixel communication logic and the set of comparators with different thresholds in every readout unit cell, it is possible to determine the photon hit position in the detector with a higher position resolution than the physical photo-detector size including the removal of the corner effect in pixel detectors.

Disclosed are various embodiments for integrated diffuse correlation spectroscopy. A first control signal can be sent to a switch to cause an integrator to integrate a current from a photodiode. An integrated current can be received from the integrator, and a data signal can be sent to a computing device based at least in part on the integrated current. A second control signal can be sent to a switch to cause the integrator to cease integrating the current from the photodiode.

A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

A light detection device including a substrate, a first light detector, a second light detector, and a switch element is provided. The first light detector is disposed on the substrate and includes a first active layer. The second light detector is disposed between the substrate and the first light detector and includes a second active layer. The switch element is disposed on the substrate. A horizontal projection of the second active layer on the substrate completely falls within a horizontal projection of the first active layer on the substrate. A negative electrode of the first light detector and a negative electrode of the second light detector are electrically connected to the switch element via a first metal layer.

Methods and apparatus for a detector system having a photodetector and an amplifier to amplify the photodetector signal. A discriminator generates an active output signal when the output from the amplifier is greater than a threshold. An injection circuit is coupled to the input of the amplifier. The injection circuit is configured to selectively inject a test pulse that mimics a pulse from the photodetector for verifying operation of the detector system.

Techniques for facilitating non-uniformity correction calibrations are provided. In one example, an infrared imaging system includes an infrared imager and a logic device. The infrared imager is configured to capture a first set of infrared images of a reference object using a first integration time. The infrared imager is further configured to capture a second set of infrared images of the reference object using a second integration time different from the first integration time. The logic device is configured to determine a dark current correction map based on the second set of infrared images. The logic device is further configured to generate a non-uniformity correction map based on the dark current correction map. Related devices and methods are also provided.

A distributed, parallel, image capture and processing architecture provides significant advantages over prior art systems. A very large array of computational circuits—in some embodiments, matching the size of the pixel array—is distributed around, within, or beneath the pixel array of an image sensor. Each computational circuit is dedicated to, and in some embodiments is physically proximal to, one, two, or more associated pixels. Each computational circuit is operative to perform computations on one, two, or more pixel values generated by its associated pixels. The computational circuits all perform the same operation(s), in parallel. In this manner, a very large number of pixel-level operations are performed in parallel, physically and electrically near the pixels. This obviates the need to transfer very large amounts of pixel data from a pixel array to a CPU/memory, for at least many pixel-level image processing operations, thus alleviating the significant high-speed performance constraints placed on modern image sensors.

A distributed, parallel, image capture and processing architecture provides significant advantages over prior art systems. A very large array of computational circuits—in some embodiments, matching the size of the pixel array—is distributed around, within, or beneath the pixel array of an image sensor. Each computational circuit is dedicated to, and in some embodiments is physically proximal to, one, two, or more associated pixels. Each computational circuit is operative to perform computations on one, two, or more pixel values generated by its associated pixels. The computational circuits all perform the same operation(s), in parallel. In this manner, a very large number of pixel-level operations are performed in parallel, physically and electrically near the pixels. This obviates the need to transfer very large amounts of pixel data from a pixel array to a CPU/memory, for at least many pixel-level image processing operations, thus alleviating the significant high-speed performance constraints placed on modern image sensors.