An integrated photodetecting optoelectronic semiconductor component configured to deliver an output signal indicative of the intensity of light irradiating the component. The component may include a SPAD-based main detection device configured to detect incoming photons and to deliver an output signal based on the detected photons. The component may also include a SPAD-based reference detection device proximate to the main detection device where the reference detection device has the same electro-optical behaviour as the main detection device, is configured to detect incoming photons, configured to deliver a reference signal based on the detected photons, and has a light inlet for incoming photons. The component may also include a neutral density filtering device and a controller configured to determine a nominal output signal, compare the nominal output signal with the output signal delivered by the main detection device, and adjust an operating parameter based on the comparison.