G01J2001/4295

Optical detector

Embodiments of the present disclosure generally relate to apparatus for and methods of detecting light utilizing the spin Seebeck effect (SSE). In an embodiment, a method for detecting broadband light is provided. The method includes generating a SSE in a device by illuminating the device with light, the device comprising a bilayer structure disposed over a substrate, the bilayer structure comprising a non-magnetic metal layer and a magnetic insulator layer. The method further includes measuring the SSE based on a field modulation method, determining, based on the measuring, an optically-created thermal gradient of the device, and detecting a wavelength range of the light. Apparatus for detecting broadband light are also described.

OPTICAL DETECTOR
20220205910 · 2022-06-30 · ·

An optical detector includes a semiconductor base portion of a first conductivity type having a first surface and a second surface and provided with a projection projecting from the second surface, a first metal electrode layer provided on the first surface or the second surface of the semiconductor base portion, a semiconductor layer of a second conductivity type having a first portion covering the second surface of the semiconductor base portion and second portions covering side surfaces of the projection, and a second metal electrode layer provided in close contact with the second semiconductor layer such that the projection and the second portions of the second semiconductor layer are interposed therebetween. An MIM resonator is constituted by the projection, the second portions of the second semiconductor layer, and the second metal electrode layer between which the projection and the second portions of the semiconductor layer are interposed.

High sensitivity optoelectronic device for detecting chemical species and related manufacturing method

A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

TERAHERTZ IMAGING SYSTEM WITH EVANESCENT-WAVE COUPLING

An imaging system that includes an image sensor and imaging optics is provided. The image sensor has a sensing surface and it captures images of a scene. The imaging optics is optically coupled to the image sensor and is configured to form the images of the scene onto the sensing surface of the image sensor. The imaging optics includes a sensor-adjacent optical element having an exit surface located in close proximity to the sensing surface of the image sensor. The exit surface of the sensor-adjacent optical element and the sensing surface of the image sensor are spaced apart by a gap having a gap width enabling evanescent-wave coupling from the exit surface to the sensing surface for light having wavelengths within the sensor spectral range.

Metal-insulator-metal high-sensitivity surface plasmon polariton terahertz wave detector
11099060 · 2021-08-24 · ·

A metal-insulator-metal (MIM) high-sensitivity plasmon polariton (SPP) terahertz wave detector includes a rectangular cavity, an absorption cavity, a silver block, two waveguides, three metal films, a terahertz probe light, a signal light, and an opto-electric detector; the terahertz probe light is located at an upper end of the rectangular cavity; the rectangular cavity is located at an input end of the terahertz probe wave; and the absorption cavity is connected with a first waveguide; the silver block is disposed within the first waveguide, and is movable; and the first waveguide is connected with a second waveguide.

Fast detector of electromagnetic radiation

A detector of electromagnetic radiation (RL) is described. The detector comprises: a substrate (1), an oriented polycrystalline layer (2) of thermoelectric material deposited on the top surface (10) of the substrate, first and second electrodes spaced the one from the other and in electrical contact with the oriented polycrystalline layer. The substrate comprises at least one ceramic layer and the oriented polycrystalline layer has a crystal orientation at an angle comprised between 30 degrees and 55 degrees relative to a normal to the top surface of the substrate.

FAST DETECTOR OF ELECTROMAGNETIC RADIATION

A detector of electromagnetic radiation (RL) is described. The detector comprises: a substrate (1), an oriented polycrystalline layer (2) of thermoelectric material deposited on the top surface (10) of the substrate, first and second electrodes spaced the one from the other and in electrical contact with the oriented polycrystalline layer. The substrate comprises at least one ceramic layer and the oriented polycrystalline layer has a crystal orientation at an angle comprised between 30 degrees and 55 degrees relative to a normal to the top surface of the substrate.

OPTICAL DETECTOR
20210055162 · 2021-02-25 ·

Embodiments of the present disclosure generally relate to apparatus for and methods of detecting light utilizing the spin Seebeck effect (SSE). In an embodiment, a method for detecting broadband light is provided. The method includes generating a SSE in a device by illuminating the device with light, the device comprising a bilayer structure disposed over a substrate, the bilayer structure comprising a non-magnetic metal layer and a magnetic insulator layer. The method further includes measuring the SSE based on a field modulation method, determining, based on the measuring, an optically-created thermal gradient of the device, and detecting a wavelength range of the light. Apparatus for detecting broadband light are also described.

METAL-INSULATOR-METAL HIGH-SENSITIVITY PLASMON POLARITON TERAHERTZ WAVE DETECTOR
20200041334 · 2020-02-06 ·

A metal-insulator-metal (MIM) high-sensitivity plasmon polariton (SPP) terahertz wave detector includes a rectangular cavity, an absorption cavity, a silver block, two waveguides, three metal films, a terahertz probe light, a signal light, and an opto-electric detector; the terahertz probe light is located at an upper end of the rectangular cavity; the rectangular cavity is located at an input end of the terahertz probe wave; and the absorption cavity is connected with a first waveguide; the silver block is disposed within the first waveguide, and is movable; and the first waveguide is connected with a second waveguide.

HIGH SENSITIVITY OPTOELECTRONIC DEVICE FOR DETECTING CHEMICAL SPECIES AND RELATED MANUFACTURING METHOD

A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.