A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is thermally connected to a heat dissipation surface of the Peltier element and accommodates the Peltier element and the sensor element. In addition, the package substrate has a heat dissipation member, made of a material having a higher thermal conductivity than a material of the package substrate, on at least a part of a surface facing the heat dissipation surface of the Peltier element.

A sensor device according to the present disclosure includes a Peltier element, a sensor element thermally connected to a cooling surface of the Peltier element, and a window member that faces a light receiving surface of the sensor element and is made of borosilicate glass.

A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

A thermal pixel configured as an electromagnetic emitter and/or an electromagnetic detector. The thermal pixel comprises a micro-platform suspended with semiconductor nanowires from a surrounding support platform. The nanowires comprise phononic structure providing a decrease in thermal conductivity. In some embodiments, the pixel is structured for operation within a broad bandwidth or a limited bandwidth. Metamaterial and/or photonic crystal filters provide pixel operation over a limited bandwidth. In some other embodiments, the micro-platform comprises a nanotube structure providing a broadband emission/absorption spectral response.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

A thermal pixel configured as an electromagnetic emitter and/or an electromagnetic detector. The thermal pixel comprises a micro-platform suspended with semiconductor nanowires from a surrounding support platform. The nanowires comprise phononic structure providing a decrease in thermal conductivity. In some embodiments, the pixel is structured for operation within a broad bandwidth or a limited bandwidth. Metamaterial and/or photonic crystal filters provide pixel operation over a limited bandwidth. In some other embodiments, the micro-platform comprises a nanotube structure providing a broadband emission/absorption spectral response.

A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

An extended area cavity type blackbody for use as a radiometric reference for imaging systems may have a well in the form of a cube having four sidewalls and a back wall, and open at the front. The temperature of the back wall may be controlled independently of the temperature(s) of the sidewalls. This system may produce infrared radiance closer to an ideal radiator than typical extended area sources. A simple blackbody is disclosed, having a source plate with a front emitting surface; a ledge element disposed in front of and below the source plate for heating air in front of the source plate; and (optionally) another ledge element disposed in front of and above the source plate for cooling air in front of the source plate. A housing may support the source plate and ledge element, and a vent may be provided in front of and above the source plate. A resistive heater may be associated with the ledge element; and (optionally) TECs may be associated with the other (cooling) ledge element. Angles of the ledges may be adjustable to optimize the best uniformity for a particular implementation. Temperature control of the ledges may be in unison with or independent from the source plate.

An extended area cavity type blackbody for use as a radiometric reference for imaging systems may have a well in the form of a cube having four sidewalls and a back wall, and open at the front. The temperature of the back wall may be controlled independently of the temperature(s) of the sidewalls. This system may produce infrared radiance closer to an ideal radiator than typical extended area sources. A simple blackbody is disclosed, having a source plate with a front emitting surface; a ledge element disposed in front of and below the source plate for heating air in front of the source plate; and (optionally) another ledge element disposed in front of and above the source plate for cooling air in front of the source plate. A housing may support the source plate and ledge element, and a vent may be provided in front of and above the source plate. A resistive heater may be associated with the ledge element; and (optionally) TECs may be associated with the other (cooling) ledge element. Angles of the ledges may be adjustable to optimize the best uniformity for a particular implementation. Temperature control of the ledges may be in unison with or independent from the source plate.