A method and corresponding system is disclosed in which the overall illuminance of an environment is analyzed to in order to detect and quantify the daylight component of the illuminance. The invention utilizes a combination of visual and non-visual sensors and a signal processing algorithm that filters and analyzes the sensor data.

An embodiment of a device is disclosed. The device includes a lens, operative in the infrared, configured to receive an image of a field of view of the lens, a microlens array, operative in the infrared, optically coupled to the lens and configured to create an array of light field images based on the image, a photodetector array comprising a plurality of non-silicon photodetectors, photosensitive in at least part of the thermal spectrum from 3 microns to 14 microns, the photodetector array being optically coupled to the microlens array and configured to generate output signals from the non-silicon photodetectors based on the array of light field images, and a read-out integrated circuit (ROIC) communicatively coupled to the photodetector array and configured to receive the signals from the photodetector array, convert them to digital signals and to output digital data.

A method for thermal imaging includes extracting pixel intensity data from a plurality of images corresponding to electromagnetic radiation emitted from one or more targets, creating an array for each image pixel in the plurality of images, wherein each pixel array represents a distribution of intensity data from corresponding pixels in each of the images, removing from each pixel array an amount of intensity data such that a remaining amount of intensity data represents an approximate equivalent to a distribution of intensity data uncontaminated by interference; and generating a thermal image representing the one or more targets based on the remaining amount of intensity data in each pixel array.

A method for thermal imaging includes extracting pixel intensity data from a plurality of images corresponding to electromagnetic radiation emitted from one or more targets, creating an array for each image pixel in the plurality of images, wherein each pixel array represents a distribution of intensity data from corresponding pixels in each of the images, removing from each pixel array an amount of intensity data such that a remaining amount of intensity data represents an approximate equivalent to a distribution of intensity data uncontaminated by interference; and generating a thermal image representing the one or more targets based on the remaining amount of intensity data in each pixel array.

A spectral conversion element for electromagnetic radiation includes Terahertz antennas and infrared antennas which are distributed in pixel zones. The Terahertz antennas and the infrared antennas which are in one same pixel zone are thermally coupled, and those which are in different pixel zones are uncoupled. Such an element enables the capture of images which are formed with Terahertz radiation, by using an infrared image detector.

The present invention refers to a device (112) for monitoring an emission temperature of at least one radiation emitting element (114), a heating system (110) for heating at the least one radiation emitting element (114) to emit thermal radiation at an emission temperature, a method for monitoring an emission temperature of at least one radiation emitting element (114) and method for heating the at least one radiation emitting element (114) to emit thermal radiation at an emission temperature. Herein, the device (112) for monitoring an emission temperature of at least one radiation emitting element (114) comprisesat least one light source (125), wherein the light source is configured to emit optical radiation at least partially towards the at least one radiation emitting element (114); at least one radiation sensitive element (126), wherein the at least one radiation sensitive element (126) has at least one sensor region (128), wherein the at least one sensor region (128) comprises at least one photosensitive material selected from at least one photoconductive material, wherein the at least one sensor region (128) is designated for generating at least one sensor signal depending on an intensity of the thermal radiation emitted by the at least one radiation emitting element (114) and received by the sensor region (128) within at least one wavelength range, wherein the sensor region (128) is further designated for generating at least one further sensor signal depending on an intensity of the optical radiation emitted by the at least one light source (125) and received by the sensor region (128) within at least one further wavelength range, wherein the at least one radiation sensitive element (126) is arranged in a manner that the thermal radiation travels through at least one transition material (116) prior to being received by the at least one radiation sensitive element (126), wherein at least one of the at least one light source (125) and the at least one radiation sensitive element (126) is arranged in a manner that the optical radiation travels through the at least one transition material (116) and impinges the at least one radiation emitting element (114) prior to being received by the at least one radiation sensitive element (126); andat least one evaluation unit (138), wherein the at least one evaluation unit (138) is configured to determine the emission temperature of the at least one radiation emitting element (114) by using values for

A spectral conversion element for electromagnetic radiation includes Terahertz antennas and infrared antennas which are distributed in pixel zones. The Terahertz antennas and the infrared antennas which are in one same pixel zone are thermally coupled, and those which are in different pixel zones are uncoupled. Such an element enables the capture of images which are formed with Terahertz radiation, by using an infrared image detector.

An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.