A toaster heating assembly (55A, 55B) including: a frame (60); a panel (65) at least partly supported by the frame (60); a spacer (80) mounted to the panel (65); and an elongate heating element (93) having a plurality of spaced apart elongate heating element portions (95) supported by the spacer (80), so that the spacer (80) is located between the plurality of heating element portions (95) and the panel (65) to provide a gap (94) between the plurality of heating element portions (95) and the panel (65).

An infrared sensor uses an infrared lens with infrared filtering and focusing functions. Thus, an infrared filter can be omitted to reduce the costs and volume. In addition, a getter on the inside of a metal cover of the infrared sensor can be activated when the metal cover is soldered to the substrate of the infrared sensor. Therefore, the packaging process of the infrared sensor can be simplified.

Pyroelectric detection device, including at least: a substrate; a membrane arranged on the substrate; a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes; a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate; an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.

A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

In a method for noncontact, radiation thermometric temperature measurement, a short-circuit photocurrent that is proportional to a received radiant power is produced in a photodiode radiation detector that is operating photovoltaically without bias voltage. The photocurrent is processed in a current to voltage converter. Subsequently, a temperature signal corresponding to the radiant power is generated. A corrective current, dependent on a temperature of the photodiode radiation detector, is added to the short-circuit photocurrent to compensate a fault current, wherein the fault current is based on an input bias current and an input offset voltage of the current to voltage converter across a temperature-dependent shunt resistance of the photodiode radiation detector. A device with a corrective current source controlled by a microcontroller is provided that can be used to perform the method.

An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.

Techniques associated with generating or tuning parameters associated with long wave infrared sensor data to improve object detection associated with the captured images are discussed herein. The system may determine a region of interest associated with the sensor data and adjust or tune the parameters to improve detection(s) within the region of interest. Additionally, the system may adjust the parameters based on map data and/or environmental conditions, such as weather and temperature.

Techniques associated with generating or tuning parameters associated with long wave infrared sensor data to improve object detection associated with the captured images are discussed herein. The system may determine a region of interest associated with the sensor data and adjust or tune the parameters to improve detection(s) within the region of interest. Additionally, the system may adjust the parameters based on map data and/or environmental conditions, such as weather and temperature.

A temperature estimation device (100) is provided with: an acquiring section (131) that acquires a photographed image photographed by a photographing section (110) including an infrared light sensor and a housing; a generating section (132) that corrects the photographed image with use of a correction parameter and a temporarily set temperature of the housing to generate a corrected image of the photographed image, the correction parameter that is calculated by prior temperature calibration with respect to the photographing section (110); and an estimating section (135) that estimates a temperature of the housing on the basis of non-uniformity of luminance values of pixels included in the corrected image.

A method of measuring temperature based upon a system of equations applying Stefan-Boltzmann's law and using a measurement value for an object to be measured and an ambient temperature value (Ta) comprises: pre-calculating (200, 202) a first vector (LUT1) and a second vector (LUT2). The first vector (LUT1) is a series of values proportional to received power based upon respective temperature values and in respect of a predetermined generic range of temperatures. The second vector (LUT2) is a series of sensitivity characteristic factor values based upon expected measured temperature values and in respect of a predetermined range of expected object measured temperatures. The first vector (LUT1) and the second vector (LUT2) are used (206) to generate a temporary vector (LUT.sub.T) of a series of values limited to the ambient temperature value to solve the system of equations in respect of the measurement value for the object, thereby determining (208) a temperature (To) for the object from the measurement value.