Patent classifications
G01J5/12
Body Temperature Measurement Method, Electronic Device, and Computer-Readable Storage Medium
A body temperature measurement method applied to a wrist wearable device includes, when a body temperature of a user is measured, measuring a first temperature at a forehead of the user using a temperature sensor, and measuring a second temperature at a wrist of the user is using a second temperature sensor at a relatively close time. Through calculation, a third temperature associated with the first temperature is displayed on a display. A fourth temperature at the wrist is then measured using the second temperature sensor. When the fourth temperature is the same as the second temperature, the third temperature is displayed on the display according to the foregoing relationship.
Method for making infrared light absorber
A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.
A HIGH-BANDWIDTH THERMOELECTRIC THIN-FILM UV, VISIBLE LIGHT AND INFRARED RADIATION SENSOR AND A METHOD FOR MANUFACTURING THEREOF
The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1 W/(m K{circumflex over ( )}2), Seebeck coefficient modulus would be greater than 100 μV/K and its molecular weight is less than 900 Da.
A HIGH-BANDWIDTH THERMOELECTRIC THIN-FILM UV, VISIBLE LIGHT AND INFRARED RADIATION SENSOR AND A METHOD FOR MANUFACTURING THEREOF
The invention relates to UV, visible light and infrared radiation sensors, in particular to high-bandwidth thin-film electromagnetic radiation sensors, operating using the principle of thermoelectric effect. According to one embodiment the sensor comprises: a thermoelectric active layer, an electrode layer one and an electrode layer two, wherein the electrode layer one is located below the thermoelectric active layer and the electrode layer two is located above the thermoelectric active layer, whereby the sensor is designed so that the thermal gradient can be created and the electrical voltage can be measured perpendicular to the thermoelectric active layer, between the electrode layer one and the electrode layer two, wherein the material of the thermoelectric active layer is low molecular weight organic compound, selected so that its thermal conductivity would be less than 1 W/(m K{circumflex over ( )}2), Seebeck coefficient modulus would be greater than 100 μV/K and its molecular weight is less than 900 Da.
RADIATION THERMOMETER, TEMPERATURE MEASUREMENT METHOD, AND TEMPERATURE MEASUREMENT PROGRAM
A radiation thermometer 100 includes two infrared detectors 1 and 1′ and a temperature calculator 2. The infrared detectors 1 and 1′ each have a predetermined measurement visual field and detect the amount of infrared rays incident from the measurement visual field. The temperature calculator 2 calculates the temperature of a measurement target region Xa based on the amounts of infrared rays detected by the respective infrared detectors 1 and 1′. The measurement target region Xa is included in the measurement visual fields of the respective infrared detectors 1 and 1′, and the sizes of the respective measurement visual fields are set to be different frm each other with respect to the measurement target region Xa.
RADIATION THERMOMETER, TEMPERATURE MEASUREMENT METHOD, AND TEMPERATURE MEASUREMENT PROGRAM
A radiation thermometer 100 includes two infrared detectors 1 and 1′ and a temperature calculator 2. The infrared detectors 1 and 1′ each have a predetermined measurement visual field and detect the amount of infrared rays incident from the measurement visual field. The temperature calculator 2 calculates the temperature of a measurement target region Xa based on the amounts of infrared rays detected by the respective infrared detectors 1 and 1′. The measurement target region Xa is included in the measurement visual fields of the respective infrared detectors 1 and 1′, and the sizes of the respective measurement visual fields are set to be different frm each other with respect to the measurement target region Xa.
COMMUNICATION APPARATUS AND METHOD FOR ADAPTIVE COOLING OF ANTENNA ELEMENTS
A communication apparatus that includes a first antenna array having a first plurality of antenna elements, and a first plurality of thermoelectric devices that are arranged on the first plurality of antenna elements of the first antenna array. The communication apparatus further includes a processor that obtains traffic information of a geographical area surrounding a deployed location of the communication apparatus. The processor further controls each of the first plurality of thermoelectric devices to increase or decrease cooling from each of the first plurality of thermoelectric devices based on the obtained traffic information that indicates a number of user equipment (UEs) to be served in the geographical area.
FAR INFRARED (FIR) SENSOR DEVICE AND MANUFACTURING METHOD THEREOF AND DETERMINATION METHOD OF THICKNESS OF SENSOR DIELECTRIC LAYER THEREOF
The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.
FAR INFRARED (FIR) SENSOR DEVICE AND MANUFACTURING METHOD THEREOF AND DETERMINATION METHOD OF THICKNESS OF SENSOR DIELECTRIC LAYER THEREOF
The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.
Detector of electromagnetic radiation
A detector of electromagnetic radiation (RL) is described. The detector comprises: an oriented polycrystalline layer (2) of thermoelectric material, a substrate (1) superimposed on the top surface of the oriented polycrystalline layer so that the back surface (10) is in contact with the oriented polycrystalline layer, first and second electrodes spaced the one from the other and in electrical contact with the oriented polycrystalline layer. The substrate comprises at least one ceramic layer and the oriented polycrystalline layer has a crystal orientation at an angle comprised between 30 degrees and 55 degrees relative to a normal to the top surface of the substrate.