A thermopile sensor including a uniform substrate having a first surface with a first section and a second section at an elevation varying relative to the first section by between about 5 micrometers and about 500 micrometers. The sensor further includes a plurality of thermopile junctions, with each junction having (i) a first strip of a first conductive material, extending from the first section to the second section, (ii) a second strip of a second conductive material, forming an electrical junction with the first strip on the second section and extending to the first section, and (iii) with the thermopile junctions being connected in series. A first contact pad on the substrate is connected to an initial thermopile junction and a second contact pad on the substrate is connected to a last thermopile junction, with conductors connecting to the first and second contact pads and extending off of the substrate.

A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

A semiconductor product comprising: a semiconductor substrate and a test structure, the test structure comprising: a thermopile and at least one temperature sensitive element, the at least one temperature sensitive element being located in the substrate, or between the substrate and the thermopile.

A semiconductor product comprising: a semiconductor substrate and a test structure, the test structure comprising: a thermopile and at least one temperature sensitive element, the at least one temperature sensitive element being located in the substrate, or between the substrate and the thermopile.

An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.

An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

A system for measuring a sensor having two terminals includes first and second transistors with first and second control signal inputs connected to the sensor terminals. The system further includes a current divider including a reference current input, a current divider control input and first and second current outputs connected to the first and second transistors. First and second load circuits are connected to the first and second transistors at first and second differential output nodes. First and second integrator circuits are connected to the first and second differential output nodes. A comparator is driven by first and second differential output nodes. The comparator output controls a digital filter. A value of the a current divider control signal driving the current divider control input depends at least indirectly from the digital filter output.