A component for detecting electromagnetic radiation includes a detection structure and a supply circuit for the detection structure. The detection structure includes a transistor associated with an absorbent element for detecting the rise in temperature of the absorbent element when electromagnetic radiation is absorbed. The supply circuit is configured to supply the detection structure in operation such that a channel zone of the structure has, at the location of one of its first and the second faces, a layer having carriers of a second type of conductivity opposite to a first type of conductivity of a source zone and of a drain zone of the transistor, the layer being referred to as blocking layer.

A component for detecting electromagnetic radiation includes a detection structure and a supply circuit for the detection structure. The detection structure includes a transistor associated with an absorbent element for detecting the rise in temperature of the absorbent element when electromagnetic radiation is absorbed. The supply circuit is configured to supply the detection structure in operation such that a channel zone of the structure has, at the location of one of its first and the second faces, a layer having carriers of a second type of conductivity opposite to a first type of conductivity of a source zone and of a drain zone of the transistor, the layer being referred to as blocking layer.

A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).

In an image processing apparatus, a first correction unit corrects imaging data acquired from an infrared imaging device, based on a first correction table, and outputs first corrected data. A second correction unit generates a second correction table for the imaging data in a state in which a shutter is closed, and outputs second corrected data based on the second correction table. A saturated region detection unit detects a saturated region in the imaging data. A shutter control unit performs closing control for the shutter, based on a result of detection of the saturated region. An abnormal pixel detection unit detects whether or not the imaging data acquired in the state in which the shutter is closed includes an abnormal pixel. A selection unit selects and outputs either the first corrected data or the second corrected data in accordance with a result of detection by the abnormal pixel detection unit.

A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.

A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.

Disclosed herein is a device including at least one photoconductor configured for exhibiting an electrical resistance dependent on an illumination of a light-sensitive region of the photoconductor; and at least one photoconductor readout circuit, where the photoconductor readout circuit includes at least one voltage divider circuit, where the voltage divider circuit includes at least one reference resistor Rref being arranged in series with the photoconductor, where the photoconductor readout circuit includes at least one amplifier device, where the photoconductor readout circuit includes at least one capacitor arranged between an input of the amplifier device and an output of the voltage divider circuit.

A trigger sense circuit includes a pseudo-differential comparator circuit in signal communication with a pixel array. The pseudo-differential comparator circuit includes a first input in signal communication with a reference pixel group included in the pixel array to receive a pixel reference voltage, and a second input in signal communication with a target pixel group included in the pixel array to receive a pixel target voltage. The pseudo-differential comparator circuit is configured to selectively operate in a calibration mode to remove false trigger events and a comparison mode to detect at least one overheated pixel included in the target pixel group.