A MEMS optical device and an array composed thereof are disclosed herein, wherein the MEMS optical device comprises a light absorbing element, a deforming element, and a magnetic detector, wherein the magnetic detector comprises a magnetic source and a magnetic sensor.

In accordance with heat received from a target object, a visible light absorption element 10 changes a frequency component of visible light to reflect or transmit. The visible light absorption element 10 possesses a resonance frequency included in a visible light frequency region. The visible light absorption element 10 absorbs visible light of the resonance frequency. The visible light absorption element 10 thermally deforms due to temperature change to thereby change the resonance frequency, and absorbs visible light of the changed resonance frequency.

A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

An infrared detector includes a substrate in which a void is formed, a micro-resonator suspended over the void, an infrared absorber on an upper surface of the micro-resonator, a thermal isolation bridge supporting the micro-resonator, a first waveguide optically coupled with the micro-resonator, a second waveguide intersecting the first waveguide and optically coupled with the micro-resonator, a light source optically coupled with the first waveguide, and a photodetector optically coupled with the second waveguide.

The invention relates to a device and method for imaging electromagnetic radiation from an object. The device includes entrance optics for allowing the electromagnetic radiation to enter the device, including an image plane onto which an image of the object is to be imaged. The device includes an interferometer having a measurement arm, wherein the image plane is in the measurement arm. The device includes a transformation layer, at the image plane, for transforming the electromagnetic radiation into a spatiotemporal variation of the refractive index of the transformation layer for causing spatiotemporal optical phase differences in the measurement arm of the interferometer that are processed to result in a representative image of the object.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Zero-power system for remote monitoring of heat sources is provided. The systems detect failure indicators of remote equipment including power substations, oil rigs, large inaccessible machinery in a factory, and communications equipment. The systems also can be used to detect the presence of people in buildings or in other locations, so as to improve HVAC utilization in large buildings. When the zero-power monitoring systems detect heat sources, such as the presence of people, failure indicators, or a targeted environmental signal, a circuit is closed using the energy of the detected radiation, and activating an RFID tag, a radio transmitter, or an alarm. The monitoring systems can remain deployed and active for many years without the need for battery replacement.

A metal-insulator-metal (MIM) high-sensitivity plasmon polariton (SPP) terahertz wave detector includes a rectangular cavity, an absorption cavity, a silver block, two waveguides, three metal films, a terahertz probe light, a signal light, and an opto-electric detector; the terahertz probe light is located at an upper end of the rectangular cavity; the rectangular cavity is located at an input end of the terahertz probe wave; and the absorption cavity is connected with a first waveguide; the silver block is disposed within the first waveguide, and is movable; and the first waveguide is connected with a second waveguide.