An apparatus for processing substrates includes a continuum radiation source, a source manifold optically coupled to the continuum radiation source and comprising: a plurality of beam guides, each having a first end that optically couples the beam guide to the continuum radiation source; and a second end. The apparatus also includes a detector manifold to detect radiation originating from the source manifold and transmitted through a processing area, and one or more transmission pyrometers configured to analyze the source radiation and the transmitted radiation to determine an inferred temperature proximate the processing area.

An apparatus for processing substrates includes a continuum radiation source, a source manifold optically coupled to the continuum radiation source and comprising: a plurality of beam guides, each having a first end that optically couples the beam guide to the continuum radiation source; and a second end. The apparatus also includes a detector manifold to detect radiation originating from the source manifold and transmitted through a processing area, and one or more transmission pyrometers configured to analyze the source radiation and the transmitted radiation to determine an inferred temperature proximate the processing area.

A long wavelength infrared sensor includes a first magnetoresistive unit; a second magnetoresistive unit; and a light absorption layer that absorbs light and emits heat, wherein the first magnetoresistive unit includes a first magnetoresistive element and a second magnetoresistive element electrically connected to each other, the second magnetoresistive unit includes a third magnetoresistive element and a fourth magnetoresistive element electrically connected to each other, the first and third magnetoresistive elements each have an antiparallel state of magnetization direction, the second and fourth magnetoresistive elements each have a parallel state of magnetization direction, and the first magnetoresistive element is electrically connected to the third magnetoresistive element by way of the second magnetoresistive element.

A long wavelength infrared sensor includes a first magnetoresistive unit; a second magnetoresistive unit; and a light absorption layer that absorbs light and emits heat, wherein the first magnetoresistive unit includes a first magnetoresistive element and a second magnetoresistive element electrically connected to each other, the second magnetoresistive unit includes a third magnetoresistive element and a fourth magnetoresistive element electrically connected to each other, the first and third magnetoresistive elements each have an antiparallel state of magnetization direction, the second and fourth magnetoresistive elements each have a parallel state of magnetization direction, and the first magnetoresistive element is electrically connected to the third magnetoresistive element by way of the second magnetoresistive element.

A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

A photonic bolometer includes: a photonic chip; a weak thermal link; a thermally-isolated member, and the weak thermal link thermally isolates the thermally-isolated member from the photonic chip; a photonic temperature sensor; a chip waveguide in optical communication with the photonic temperature sensor; and a photon absorber that receives incident radiation light, increases temperature due to absorption of the incident radiation light, heats the photonic temperature sensor in response to receipt of the incident radiation light, and changes the resonance frequency of the photonic temperature sensor in response to receiving the incident radiation light.

A photonic bolometer includes: a photonic chip; a weak thermal link; a thermally-isolated member, and the weak thermal link thermally isolates the thermally-isolated member from the photonic chip; a photonic temperature sensor; a chip waveguide in optical communication with the photonic temperature sensor; and a photon absorber that receives incident radiation light, increases temperature due to absorption of the incident radiation light, heats the photonic temperature sensor in response to receipt of the incident radiation light, and changes the resonance frequency of the photonic temperature sensor in response to receiving the incident radiation light.

Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.

Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat.