Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

According to one embodiment, a superconducting element used as a pixel for detecting a particle is disclosed. The superconducting element includes at least one superconducting strip. The at least one superconducting strip includes a superconducting portion extending in a first direction, including first and second ends and made of a first superconducting material, a first conductive portion connected to the first end of the superconducting portion, and a second conductive portion connected to the second end of the superconducting portion. A superconducting region of the superconducting portion is configured to be dived when the particle is made incident on the superconducting portion along the first direction via the first conductive portion.

A detector of microwave radiation includes a signal input and a detector output. An absorber element of ohmic conductivity is coupled to said signal input through a first length of superconductor. A variable impedance element, the impedance of which is configured to change as a function of temperature, is coupled to the detector output through a second length of superconductor. The detector also includes a heating input and a heating element coupled to the heating input through a third length of superconductor. The absorber element, the variable impedance element, and the heating element are coupled to each other through superconductor sections of lengths shorter than any of said first, second, and third lengths of superconductor.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

Technology is disclosed herein that the enhances the measurability of on-chip temperature in a cryogenic quantum computing environment. In an implementation, transceiver circuitry sends a probe signal through a target device. A lumped-element resonator device that is proximate to the surface of the target device interacts with the probe signal and modulates the probe signal. Processing circuitry reads the probe signal through the target device, and responsively measures the resonance frequency of the lumped-element resonator device. The processing circuitry correlates the measured resonance frequency with a temperature and responsively determines the temperature of the target device.

Provided is a superconducting transition-edge thermal sensor, comprising a superconducting film defining an active area for incidence of quanta thereon, wherein the superconducting film is made of a superconductor exhibiting a charge carrier density below 10.sup.13 cm.sup.−2 and an electronic heat capacity below 10.sup.3 kb at the critical temperature Tc of said superconductor, wherein the superconductor is formed by two or more layers of two-dimensional crystals stacked on top of another.

Techniques regarding determining the temperature of one or more quantum computing devices are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a temperature component that can determine a temperature of a superconducting resonator based on a frequency shift exhibited by the superconducting resonator due to a change in kinetic inductance with a change in temperature.

A detector of microwave radiation comprises a signal input and a detector output. An absorber element of ohmic conductivity is coupled to said signal input through a first length of superconductor. A variable impedance element, the impedance of which is configured to change as a function of temperature, is coupled to the detector output through a second length of superconductor. There is also a heating input and a heating element coupled to the heating input through a third length of superconductor. The absorber element, the variable impedance element, and the heating element are coupled to each other through superconductor sections of lengths shorter than any of said first, second, and third lengths of superconductor.

A method and a structure for a low temperature thermometer is provided. The present invention may include a method of determining an ambient temperature is below a transition temperature, the method including measuring a magnetic field of a magnetic field source, where a superconducting film is positioned between a magnetic field sensor and the magnetic field source, where the superconducting film has the transition temperature, T.sub.c, based on determining the measured magnetic field approximately equals an expected magnetic field of the magnetic field source, outputting a first state of a switch, wherein the first state of the switch indicates the ambient temperature is above the T.sub.c, based on determining the measured magnetic field is less than the expected magnetic field, outputting a second state of the switch, where the second state of the switch indicates the ambient temperature is below the T.sub.c.

Techniques regarding determining the temperature of one or more quantum computing devices are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a temperature component that can determine a temperature of a superconducting resonator based on a frequency shift exhibited by the superconducting resonator due to a change in kinetic inductance with a change in temperature.