Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion. A resistivity per unit length of the first gate runner portion is larger than a resistivity per unit length of the second gate runner portion.

An object of the present invention is to provide a semiconductor apparatus capable of recognizing the actual temperature for each semiconductor chip even while driving the device.

A semiconductor apparatus of the present disclosure includes a semiconductor chip, a plurality of pad electrodes formed in the semiconductor chip, and an impedance element electrically connected between at least two pad electrodes of the plurality of pad electrodes. Then, the semiconductor apparatus is configured to be capable of measuring a temperature of the semiconductor chip by applying a certain electrical signal between the at least two pad electrodes connected with the impedance element from outside of the semiconductor chip.

There may be provided a machining monitor that may include (i) a sensing unit that comprises a thermal sensor, (ii) a processor, (iii) a communication unit, and (iv) a housing. The thermal sensor is configured to (a) thermally sense a sensed region related to the machining during a machining, and while being rotated by a mechanical coupling to a rotation of a cutting tool, and (b) generate thermal detection signals. The processor is configured to determine a temperature parameter related of the sensed region based on the thermal detection signals.

The invention relates to a method, a device and a system for monitoring the IGBT junction temperature, wherein the linear relationship between each turn-off DC bus ringing peak voltage and the corresponding turn-off IGBT junction temperature, the phase current directions, and the initial and secondary states of the half-bridge arms are used to accurately determine the monitoring time of the turn-off DC bus ringing peak voltage, thereby obtaining the IGBT junction temperature at a converter level with higher sensitivity. The IGBT junction temperature obtained using the junction temperature monitoring method provided by the invention is an appropriate converter-level parameter, which has a good application prospect in multi-IGBT junction temperature estimation.

A low power temperature detection method, system, and apparatus sense when a temperature threshold is reached by connecting a current conveyor (111) with a startup bias circuit (112) having a first FET (P1) (connected to level shift a reference voltage to provide an input voltage V.sub.S1), a first diode-connected BJT (Q0) (connected to generate a base-emitter voltage based on the junction temperature), and a second FET (P2) (connected to level shift the base-emitter voltage), where the startup bias circuit (112) selectively connects the current conveyor (111) to ground to form a closed loop that is activated only when an emitter current at the first diode-connected BJT (Q0) enters a self-turned-on operation region, thereby activating the current conveyor to detect a temperature threshold being reached by the device junction temperature.

The invention relates to a high-sensitivity silicon carbide integratable temperature sensor. Voltage drops of an N-type silicon carbide conductor and a P-type silicon carbide semiconductor of the temperature sensor are a positive temperature coefficient and a negative temperature coefficient respectively, so that the change rate of a difference between the voltage drops of two electrodes with temperature will be increased. The temperature sensor has a wide temperature measurement range and high temperature measurement sensitivity, can be integrated in a silicon carbide power semiconductor alone, and is process-compatible.

An infrared temperature sensor comprises a thermopile sensor and an infrared reflector, wherein the infrared reflector reflects the infrared ray radiated by a target to a first thermopile sensing element of the thermopile sensor to sense the temperature of the target. By appropriately designing the reflecting surface of the infrared reflector, a horizontal viewing angle of a sensing range of the infrared temperature sensor can be larger, while a vertical viewing angle is smaller. The thermopile sensor further comprises a second thermopile sensing element, which can sense the thermal radiation of a package structure, whereby to compensate for the measurement error induced by the temperature variation of the package structure, which results from the variation of the environmental temperature. Thus, the measurement accuracy is increased.

The invention achieves a lower noise of a sense signal of a FET-type hydrogen sensor. For solving the above problem, one aspect of a sensor system of the invention includes a reference device and a sensor device configured using FETs on a substrate, and further, well potentials of the reference device and the sensor device are electrically isolated from each other.

A stimulation probe device including a first electrode, a stimulation module, a control module and a physical layer module. The stimulation module is configured to (i) wirelessly receive a payload signal from a console interface module or a nerve integrity monitoring device, and (ii) supply a voltage or an amount of current to the first electrode to stimulate a nerve or a muscle in a patient. The control module is configured to generate a parameter signal indicating the voltage or the amount of current supplied to the electrode. The physical layer module is configured to (i) upconvert the parameter signal to a first radio frequency signal, and (ii) wirelessly transmit the first radio frequency signal from the stimulation probe to the console interface module or the nerve integrity monitoring device.