This temperature detection circuit includes: a temperature sensor having a resistance value that changes according to a change in temperature; an AC power supply that supplies AC power to the temperature sensor; a resonance circuit connected to the temperature sensor, the resonance circuit having an impedance that has an extreme value when AC power having a resonance frequency is supplied; and a voltage detection circuit that detects a voltage applied to any of a plurality of elements connected to the AC power supply. The resonance frequency in the resonance circuit and the frequency of the AC power are set to coincide with each other.

A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

A temperature in an electric machine is determined based on temperature-dependent output values of a first temperature sensor and of a second temperature sensor. The first temperature sensor has a characteristic curve having a plurality of characteristic curve branches, wherein each characteristic curve branch is associated with a specific temperature range. The output value of the second temperature sensor is used to select a characteristic curve branch; the output value of the first temperature sensor is used to determine the temperature from the selected characteristic curve branch.

The present invention relates to a method and device for measuring the temperature in power resistors based on the measurement of the high-frequency circuit parameters of said resistor. The present invention excludes the use of thermocouples, dedicated temperature sensors or thermo chambers.

The present invention relates to a method and device for measuring the temperature in power resistors based on the measurement of the high-frequency circuit parameters of said resistor. The present invention excludes the use of thermocouples, dedicated temperature sensors or thermo chambers.

A semiconductor device, including: a thermistor for temperature detection; a series resistor selection circuit including a series resistor group connected in series with the thermistor, the series resistor selection circuit being configured to select a series resistor from the series resistor group according to a selection signal; an analog/digital (A/D) converter that performs A/D conversion on a divided voltage obtained by dividing an internal power supply voltage between the thermistor and the selected series resistor to generate divided voltage data, and outputs the divided voltage data; and a control circuit. The control circuit, during a period of selecting the series resistor, controls the A/D converter to operate in a low bit count mode, such that the selected series resistor causes the divided voltage data to fall within a predetermined voltage range, and controls the A/D converter to operate in a high bit count mode after selecting the series resistor.

A semiconductor device, including: a thermistor for temperature detection; a series resistor selection circuit including a series resistor group connected in series with the thermistor, the series resistor selection circuit being configured to select a series resistor from the series resistor group according to a selection signal; an analog/digital (A/D) converter that performs A/D conversion on a divided voltage obtained by dividing an internal power supply voltage between the thermistor and the selected series resistor to generate divided voltage data, and outputs the divided voltage data; and a control circuit. The control circuit, during a period of selecting the series resistor, controls the A/D converter to operate in a low bit count mode, such that the selected series resistor causes the divided voltage data to fall within a predetermined voltage range, and controls the A/D converter to operate in a high bit count mode after selecting the series resistor.

A ratiometric temperature measurement system includes a sensing circuit to measure a temperature and a controller to determine a resistance corresponding to the sensing circuit. The sensing circuit includes a temperature sensing circuit and a current sensor. The sensing circuit utilize an electrical current to output a first voltage indicative of a first voltage differential across the temperature sensing circuit and to output a second voltage indicative of a second voltage differential across the current sensor. The controller is configured to determine a resistance corresponding to the temperature sensing circuit based at least in part on the first and second voltage differentials. The controller determines a temperature value indicative of the measured temperature based on the resistance.

The present invention relates to a testing method for the thermal contact between a temperature sensor (50) and a battery cell (10) of a battery module (30), wherein the method comprises the steps of measuring a temperature T.sub.1 of the temperature sensor (50) at a time point t.sub.1, heating the temperature sensor (50) for a defined time (t.sub.2−t.sub.1), measuring a temperature T.sub.2 of the temperature sensor (50) at a time point t.sub.2 and/or a temperature T.sub.3 of the temperature sensor (50) at a time point t.sub.3, and determining the thermal contact between the temperature sensor (50) and the battery cell (10) based on at least one of the temperature differences ΔT.sub.2,1=(T.sub.2−T.sub.1), ΔT.sub.3,1=(T.sub.3−T.sub.1) and/or ΔT.sub.3,2=(T.sub.3−T.sub.2). The invention further relates to a testing circuit (60) for a temperature sensor (50) of a battery module (30), comprising a thermistor (61) with a first node (67) connected to a first supply voltage (65) and a second node (68) connected to ground (69), a switch (63) interconnected between the first node (67) of the thermistor (61) and a second supply voltage (66), and an analog-to-digital converter (64) connected in parallel to the thermistor (61). The invention further relates to a cell supervision circuit (40) for a battery module (30), comprising a circuit carrier (45), a testing circuit (60) according to any one of the claims 1 to 10, and a temperature sensor (50) surface mounted to the circuit carrier (45) and comprising a measuring head (51) with a thermistor (61) configured to be brought into thermal contact with a battery cell (10) of the battery module (30).