Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

A heat-loss pressure microsensor for measuring a gas pressure is disclosed that includes a plurality of pressure gauges arranged proximate to one another on a substrate. The gauges may include a pair of gauges, each gauge including a thermistor having an electrical resistance that varies with its temperature, the thermistor's temperature being responsive to the gas pressure, a platform to receive the thermistor, and a support structure to hold the platform above the substrate. Each gauge may be configured to produce a gauge output signal related to the electrical resistance of its thermistor. The two gauges are configured with their platforms having equal nominal perimeters and different nominal surface areas, and their support structures having the same nominal geometry. A differential signal may be obtained from the two gauge output signals. The differential signal conveys information about the gas pressure and exhibits reduced sensitivity to fabrication-related dimensional variations.

Embodiments disclosed herein include, a sensor for detecting radical ion flux. In an embodiment, the sensor comprises a first resistor, where the first resistor comprises a length of wire of a first catalytic composition. In an embodiment, a second resistor is electrically coupled to the first resistor, where the second resistor comprises a length of wire of the first catalytic composition. In an embodiment, the second resistor is coated with a non-catalytic material. In an embodiment, the sensor further comprises a third resistor electrically coupled to the second resistor, and a fourth resistor electrically coupled to the first resistor and the third resistor

Embodiments disclosed herein include, a sensor for detecting radical ion flux. In an embodiment, the sensor comprises a first resistor, where the first resistor comprises a length of wire of a first catalytic composition. In an embodiment, a second resistor is electrically coupled to the first resistor, where the second resistor comprises a length of wire of the first catalytic composition. In an embodiment, the second resistor is coated with a non-catalytic material. In an embodiment, the sensor further comprises a third resistor electrically coupled to the second resistor, and a fourth resistor electrically coupled to the first resistor and the third resistor

The design of a vacuum gauge utilizing a micromachined silicon vacuum sensor to measure the extended vacuum range from ambient to ultrahigh vacuum by registering the gas thermal properties at each vacuum range is disclosed in the present invention. This single device is capable of measuring the pressure range from ambient and above to ultrahigh vacuum. This device applies to all types of vacuum measurement where no medium attack silicon is present. The disclosed vacuum gauge operates with thermistors and thermopile on a membrane of the thermal isolation diaphragm structure with a heat isolation cavity underneath.

The design of a vacuum gauge utilizing a micromachined silicon vacuum sensor to measure the extended vacuum range from ambient to ultrahigh vacuum by registering the gas thermal properties at each vacuum range is disclosed in the present invention. This single device is capable of measuring the pressure range from ambient and above to ultrahigh vacuum. This device applies to all types of vacuum measurement where no medium attack silicon is present. The disclosed vacuum gauge operates with thermistors and thermopile on a membrane of the thermal isolation diaphragm structure with a heat isolation cavity underneath.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.

A thermal type vacuum gauge is disclosed herein and includes a first floating structure, a second floating structure, a first cavity and a second cavity. The first floating structure is formed by the first insulating layer, the second insulating layer, and the first sensing resistor. The second floating structure is formed by the second insulating layer, and the second sensing resistor. The first cavity and the second cavity are respectively formed below the first floating structure and the second floating structure. The thermal type vacuum gauge is implemented in a measurement circuit having a first resistor, a second resistor, a third resistor and a fourth resistor. The first sensing resistor and the second sensing resistor are respectively implemented to be as at least two of the first resistor, the second resistor, the third resistor and the fourth resistor of the measurement circuit.