A device for measuring pressure includes a curved microbeam having opposing ends, a length extending between the pair of opposing ends, and a plurality of resonant frequencies, an actuating electrode extending along the length of the curved microbeam and spaced from the curved microbeam, an AC power source in communication with one of the opposing ends and the actuating electrode to deliver an AC signal at a first symmetric resonant frequency and a second symmetric resonant frequency selected from the plurality of resonant frequencies to the curved microbeam, a DC power source in communication with the opposing ends to pass an electrothermal voltage along a length of the curved microbeam, and a frequency monitoring device to monitor changes in the first symmetric resonant frequency and the second symmetric resonant frequency caused by an ambient pressure surrounding the curved microbeam.

A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.

A device for measuring pressure includes a curved microbeam having opposing ends, a length extending between the pair of opposing ends, and a plurality of resonant frequencies, an actuating electrode extending along the length of the curved microbeam and spaced from the curved microbeam, an AC power source in communication with one of the opposing ends and the actuating electrode to deliver an AC signal at a first symmetric resonant frequency and a second symmetric resonant frequency selected from the plurality of resonant frequencies to the curved microbeam, a DC power source in communication with the opposing ends to pass an electrothermal voltage along a length of the curved microbeam, and a frequency monitoring device to monitor changes in the first symmetric resonant frequency and the second symmetric resonant frequency caused by an ambient pressure surrounding the curved microbeam.

A vibratory meter (5) for determining a vapor pressure of a fluid is provided. The vibratory meter (5) includes a meter assembly (10) having a fluid, and a meter electronics (20) communicatively coupled to the meter assembly (10). The vibratory meter (5) is configured to determine a vapor pressure of the fluid in the meter assembly (10) based on a static pressure of the fluid in the meter assembly (10).

A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

A metallic pressure measuring cell having a base body, a metallic membrane situated on the base body, wherein a membrane chamber is formed between the membrane and the base body, a pressure sensor situated in a sensor chamber of the base body, wherein a connecting channel is formed between the membrane chamber and the sensor chamber and the chambers are filled with a pressure transmitting medium for transmitting a pressure acting on the membrane, characterized in that the membrane comprises a surface structure, which, in a plan view, at least overlaps an outer contour of an inlet area of the connecting channel into the membrane chamber.

This disclosure presents methods and systems to reduce measurement jitter of a resonating element. A time control is utilized to analyze the phase of a received frequency from the resonating element. Using that analysis, the time control can determine a next time point to direct the re-excitation of the resonating element. Through controlling when the resonating element is electrically excited, the measurement analyzer can determine a pressure or temperature at the location of the resonating element while accounting for remaining resonating energy from previous electrical excitations. The method and system can allow for measurements to be taken at a significantly faster rate while reducing uncertainty, e.g., jitter, in the collected measurements.

A system and method for determining a physical parameter of a fluid in a pipe includes performing a numerical vibration simulation of the section of the pipe resulting in a computed Eigen-frequency range of computed maxima; inducing a first vibration and acquiring first maxima in an amplitude-frequency diagram; selecting a first hoop mode maximum and inducing a second vibration to acquire second maxima with a second frequency. Using a vibration mode analysis, a second hoop mode maximum is selected and the physical parameter of the fluid is derived from a difference between the first hoop mode maximum and the second hoop mode maximum.

A metallic pressure measuring cell having a base body, a metallic membrane situated and a pressure sensor situated in a sensor chamber of the base body, wherein the pressure on the membrane is transmitted to the pressure sensor by a connecting channel formed between a membrane chamber and a sensor chamber, wherein the chambers and connecting channel are filled with a pressure transmitting medium.

A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.