A MEMS pressure sensor is provided having a membrane made with one of plurality of metal layers. A lid is positioned above the membrane and connected to a plurality of cavity walls at distal ends of the membrane. The lid includes an array of holes positioned on a region of the lid. A fixed metal electrode is positioned below the lid.

A field device for processing and automation technology includes a first and a second component that can each be mechanically connected at a joining surface by means of a joining point. Two metal surface layers are each applied at least to the joining surface of the first component and the joining surface of the second component. The metal of the surface layers is different from the metal of the first and/or the metal of the second component. A joining material is applied between the respective joining surfaces of the two components, wherein the joining material includes particles at least partially consisting of a metal that corresponds with the metal of the surface layers The joining of the two components occurs at a joining temperature below 300° C.

A fluid-dynamic device with integrated sensor element includes a first chamber suitable for the containment and/or the passage of a fluid, provided with an inlet opening operatively connectable to a fluid-dynamic circuit and configured to allow a fluid to enter the first chamber, and with a separate outlet opening, operatively connectable to a fluid-dynamic circuit and configured to expel said fluid from the first chamber. The first chamber includes at least one portion elastically deformable due to the action of the fluid contained therein and/or passing through the first chamber, to which a sensor element is associated which is sensitive to the deformation of the elastically deformable portion of the first chamber.

A pressure sensor including: a structure which delimits a main cavity of a closed type, the structure being at least partially deformable as a function of a pressure external to the structure; and a MEMS device, which is arranged in the main cavity and generates an output signal, which is of an electrical type and is indicative of the pressure inside the main cavity.

A sensor device includes a housing frame defining a first opening and a second opening; a sensing element having first and second sides is disposed within the housing frame and defines therein a first cavity at its first site and a second cavity at its second site, wherein the sensing element determines a differential pressure between the first and second sides; a first corrugated diaphragm configured to close the first opening to seal the first cavity, and a second corrugated diaphragm configured to close the second opening to seal the second cavity; and an inert hydraulic fluid disposed within the first and second cavities that fluidly couples an external pressure acting on the respective corrugated diaphragm to the respective side of the sensing element, wherein the first corrugated diaphragm and the second corrugated diaphragm is built by a conformal coating process using a substrate with structured surface.

In an embodiment a membrane includes a hydrophobic region having a plurality of hierarchically arranged micrometer-sized and submicrometer-sized units consisting of a membrane material, wherein a single micrometer-sized unit has a diameter of from 1 μm to 5 μm and a single submicrometer-sized unit has a diameter of <1 μm, and wherein the membrane is configured to be used in a pressure sensor system.

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.

A pressure sensor including: a structure which delimits a main cavity of a closed type, the structure being at least partially deformable as a function of a pressure external to the structure; and a MEMS device, which is arranged in the main cavity and generates an output signal, which is of an electrical type and is indicative of the pressure inside the main cavity.

A pressure sensor includes a pre-formed diaphragm located at the distal end of a pressure sensor. The diaphragm has a convex surface on a first side of the diaphragm which is exposed to a fluid to be measured. A strain gauge is attached to a second surface on the opposite side of the diaphragm. The diaphragm may be deformed to have the convex curvature on the first surface, and heat treated.