PMUT acoustic transducer formed in a body of semiconductor material having a face and accommodating a plurality of first buried cavities, having an annular shape, arranged concentrically with each other and extending at a distance from the face of the body. The first buried cavities delimit from below a plurality of first membranes formed by the body so that each first membrane extends between a respective first buried cavity of the plurality of first buried cavities and the face of the body. A plurality of piezoelectric elements extend on the face of the body, each piezoelectric element extending above a respective first membrane of the plurality of first membranes. The first membranes have different widths, variable between a minimum value and a maximum value.

A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

A pressure sensor including: a structure which delimits a main cavity of a closed type, the structure being at least partially deformable as a function of a pressure external to the structure; and a MEMS device, which is arranged in the main cavity and generates an output signal, which is of an electrical type and is indicative of the pressure inside the main cavity.

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

A method for forming a pressure sensor includes forming a base of a sapphire material, the base including a cavity formed therein; forming a sapphire membrane on top of the base and over the cavity; forming a lower electrode on top of the membrane; forming a piezoelectric material layer on an upper surface of the lower electrode, the piezoelectric material layer being formed of aluminum nitride (AIN); and forming at least one upper electrode on an upper surface of the piezoelectric material layer.

A optical sensor assembly is disclosed that includes a sensor diaphragm configured to deflect responsive to an applied stimulus. The sensor assembly includes a first Extrinsic Fabry-Perot Interferometer (EFPI) having a first optical cavity in communication with at least a portion of the sensor diaphragm, the first EFPI is configured to interact with light to produce a combined measurement light signal and a first common-mode light signal, the measurement light signal corresponding to the applied stimulus. The sensor assembly also includes a second EFPI having a second optical cavity, the second EFPI is configured to interact with light to produce a second common mode light signal for error correction. The sensor assembly may further include a sensing optical fiber in communication with the first EFPI; a reference optical fiber in communication with the second EFPI; and a glass header configured to support the sensing optical fiber and the reference optical fiber.

A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

Arrangement with capacitive pressure-measuring cell has a diaphragm for measuring vacuum pressure and a printed circuit board acting as a temperature sensor and another electronic component designed as a microchip that contains a digital signal processor with a temperature-to-digital converter and a capacitance-to-digital converter using a time measuring method. The converters determine temperature and capacitance of the cell in comparison to a reference resistor for temperature arranged on the printed circuit board and reference capacitor for capacitance for the pressure to be measured dependent on deformation of the diaphragm. A temperature-corrected pressure signal derived from the two measured signals uses correlation, the measured signals having been determined in advance from a calibration process, and the temperature-corrected pressure signal is provided as a pressure signal at the signal output for further processing. In this manner there is quick pressure measurement with high measuring accuracy.

A device comprises a silicon-on-insulator (SOI) substrate having first and second silicon layers with an insulator layer interposed between them. A structural layer, having a first conductivity type, is formed on the first silicon layer. A well region, having a second conductivity type opposite from the first conductivity type, is formed in the structural layer, and resistors are diffused in the well region. A metallization structure is formed over the well region and the resistors. A first cavity extends through the metallization structure overlying the well region and a second cavity extends through the second silicon layer, with the second cavity stopping at one of the first silicon layer and the insulator layer. The well region interposed between the first and second cavities defines a diaphragm of a pressure sensor. An integrated circuit and the pressure sensor can be fabricated concurrently on the SOI substrate using a CMOS fabrication process.