The present invention relates to a method for manufacturing a membrane component with a membrane made of a thin film (<1 μm, thin-film membrane). The membrane component can be used in microelectromechanical systems (MEMS). The invention is intended to provide a method for manufacturing a membrane component, the membrane being manufacturable with high-precision membrane dimensions and a freely selectable membrane geometry. This is achieved by a method comprising . . . providing a semiconductor wafer (100) with a first layer (116), a second layer (118) and a third layer (126). Depositing (12) a first masking layer (112) on the first layer (116), the first masking layer (112) defining a first selectively processable area (114) for determining a geometry of the membrane (M.sub.1). Forming (13) a first recess (120) by anisotropic etching (13) of the first layer (116) and removing the first masking layer (112). Introducing (14) a material (122) in the first recess (120) and depositing (15) a membrane layer (124) on the first layer (116) with the introduced material (122). Depositing on the third layer (126) a second masking layer that defines a second selectively processable area. Forming a second recess by anisotropic etching of the third layer (126) and of the second layer (118) up to the first layer (116). Removing the second masking layer; and isotropically etching (18) the first layer (116), the isotropic etching being limited by the membrane layer (124) and by the introduced material (122), so that the membrane (M.sub.1) will be exposed.

In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.

A sensor membrane structure is provided. The sensor membrane structure includes a substrate, a first insulating layer, and a device layer. The substrate has a first surface and a second surface that is opposite to the first surface. A cavity is formed on the first surface, an opening is formed on the second surface, and the cavity communicates with the opening. The cavity and the opening penetrate the substrate in a direction that is perpendicular to the first surface. The first insulating layer is disposed on the first surface of the substrate. The device layer is disposed on the first insulating layer. The first insulating layer is disposed for protecting the sensor membrane structure from overetched and remain stable during the etching process, increasing the yield of the sensor membrane structure.

A MEMS module includes: a MEMS element provided with a substrate in which a hollow portion is formed, and including a movable portion, which is a part of the substrate, around the hollow portion, the movable portion having a thickness whose shape is changeable by an air pressure difference between an air pressure inside the hollow portion and an air pressure outside the substrate; and an electronic component, to which an output signal of the MEMS element is inputted, formed on the substrate, wherein the electronic component and the MEMS element are spaced apart from each other in a direction perpendicular to a thickness direction of the movable portion.

A device (1) for performing ultrasonic examinations and pressure measurements comprises an ultrasonic transducer (60), a pressure sensor (50), a housing (10) to accommodate the ultrasonic transducer (60) and the pressure sensor (50), a support plate (40) arranged in the housing (10) and a flexible membrane (21) arranged on the end face of the housing. A sealed chamber (47) for receiving a liquid medium is formed between the membrane (21) and the support plate (40), and the ultrasonic transducer (60) and the pressure sensor (50) are arranged on the support plate (40) in such a way that a first transmission surface of the ultrasonic transducer (60) and a second transmission surface of the pressure sensor (50) are directed towards the chamber (47).

MEMS device formed in a semiconductor body which is monolithic and has a first and a second main surface. A buried cavity extends into the semiconductor body below and at a distance from the first main surface. A diaphragm extends between the buried cavity and the first main surface of the semiconductor body and has a buried face facing the buried cavity. A diaphragm insulating layer extends on the buried face of the diaphragm and a lateral insulating region extends into the semiconductor body along a closed line, between the first main surface and the diaphragm insulating layer, above the buried cavity. The lateral insulating region laterally delimits the diaphragm and forms, with the diaphragm insulating layer, a diaphragm insulating region which delimits the diaphragm and electrically insulates it from the rest of the wafer.

A pressure sensor including: a structure which delimits a main cavity of a closed type, the structure being at least partially deformable as a function of a pressure external to the structure; and a MEMS device, which is arranged in the main cavity and generates an output signal, which is of an electrical type and is indicative of the pressure inside the main cavity.

A sensor for detecting the pressure of a fluid has a sensor body having at least one first body part and one second body part. The first body part and the second body part are joined together in such a way that a first face of the first body part faces a first face of the second body part, at a distance therefrom.

The pressure sensor has a circuit arrangement, which includes at least one first electrical circuit that extends at least in part in an area corresponding to a membrane portion and is configured for detecting an elastic flexure or deformation thereof.

The first electrical circuit is associated to the first face of one of the first body part and the second body part, and the first face of the other one of the first body part and the second body part forms or has associated thereto at least one circuit element, prearranged for interacting with the first electrical circuit when an elastic flexure or deformation of the membrane portion is of a degree at least equal to a substantially predetermined limit, to generate thereby information or a warning representative of at least one from among an excessive pressure of the fluid, an incorrect pressure measurement, and an anomalous state of the device.

A pressure detection structure and an electronic device are provided that improve sensitivity and accuracy of pressure detection. The pressure detection structure includes: N piezo-resistors connected at the first dielectric layer to form a Wheatstone bridge, where an opening of a first cavity is provided on the first surface of the substrate. The two ends, in a first direction, of the vertical projection of a first piezo-resistor among the N piezo-resistors on a contact surface between the N piezo-resistors and the first dielectric layer are located respectively on the two sides, in the first direction, of the vertical projection of the first cavity on the contact surface. The long side of a second piezo-resistor among the N piezo-resistors is perpendicular to the first direction, and the vertical projection of the second piezo-resistor on the contact surface does not overlap with the vertical projection of the first cavity.

A pressure sensor includes a first pressure sensing portion and a second pressure sensing portion, each including a first rigid electrode, a second rigid electrode, and a deflectable membrane structure, wherein the second rigid electrode is between the first rigid electrode and the deflectable membrane structure, and wherein the first rigid electrode, the second rigid electrode and the deflectable membrane structure are in a vertical configuration, and wherein the first and second rigid electrode of the first pressure sensing portion form a reference capacitor, and wherein the second rigid electrode and the deflectable membrane structure of the first pressure sensing portion form a sensing capacitor, and wherein the first and second rigid electrode of the second pressure sensing portion form a reference capacitor, and wherein the second rigid electrode and the deflectable membrane structure of the second pressure sensing portion form a sensing capacitor.