The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.

A method of fabricating a capacitive micromechanical electrical system (MEMS) pressure sensor includes the steps of forming a backing wafer, forming a diaphragm wafer that includes a diaphragm configured to deflect from an applied force and a pressure cavity configured to produce on the diaphragm the applied force which is indicative of a system pressure; fusing the diaphragm wafer to the backing wafer thereby forming a base wafer, forming a top wafer, joining the top wafer to the base wafer, thereby forming a detector wafer. The diaphragm defines a first capacitor surface and the top wafer defines a second capacitor surface. A void separates the second capacitor surface from the first capacitor surface by a separation distance which is a capacitor gap. A capacitive MEMS pressure sensor is also disclosed.

In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.

In micromechanical pressure sensor device and a corresponding production method, the micromechanical pressure sensor device is provided with a first diaphragm; an adjacent first cavity; a first deformation detection device situated in and/or on the first diaphragm for detecting a deformation of the first diaphragm as a consequence of an applied external pressure change and as a consequence of an internal mechanical deformation of the pressure sensor device; a second diaphragm; an adjacent second cavity; and a second deformation detection device situated in and/or on the second diaphragm for detecting a deformation of the second diaphragm as a consequence of the internal mechanical deformation of the pressure sensor device, where the second diaphragm is developed in such a way that it is not deformable as a consequence of the external pressure change.

A sensor membrane structure is provided. The sensor membrane structure includes a substrate, a first insulating layer, and a device layer. The substrate has a first surface and a second surface that is opposite to the first surface. A cavity is formed on the first surface, an opening is formed on the second surface, and the cavity communicates with the opening. The cavity and the opening penetrate the substrate in a direction that is perpendicular to the first surface. The first insulating layer is disposed on the first surface of the substrate. The device layer is disposed on the first insulating layer. The first insulating layer is disposed for protecting the sensor membrane structure from overetched and remain stable during the etching process, increasing the yield of the sensor membrane structure.

A die attachment to a support is disclosed. In an embodiment, a semiconductor package includes a support and a die attached to the support by an adhesive on a backside of the die, wherein the die includes a capacitive pressure sensor integrated on a CMOS read-out circuit, and wherein the adhesive covers only a part of the backside of the die.

Provided are a MEMS pressure sensor and a method for forming the same. The method includes: preparing a first substrate including a first surface and a second surface opposite to each other; preparing a second substrate including a third surface and a fourth surface opposite to each other; bonding the first surface and the third surface with each other and forming a cavity between the first substrate and the pressure sensing region of the second substrate; thinning the second substrate from the fourth surface by partially removing the second base, to form a fifth surface opposite to the third surface; and forming a first conductive plug passing through the second substrate from the side of the fifth surface of the second substrate to the at least one conductive layer.

A pressure sensor includes a base substrate, a first insulating layer at the base substrate, a stationary electrode at the first insulating layer, a side-wall portion around the stationary electrode at the first insulating layer, and a membrane having electrical conductivity, facing the stationary electrode across a space, and supported by the side-wall portion. The side-wall portion includes a shield electrode on the first insulating layer and a second insulating layer on the shield electrode. A distance between the stationary electrode and the membrane is less than a distance between the shield electrode and the membrane.

MEMS device formed in a semiconductor body which is monolithic and has a first and a second main surface. A buried cavity extends into the semiconductor body below and at a distance from the first main surface. A diaphragm extends between the buried cavity and the first main surface of the semiconductor body and has a buried face facing the buried cavity. A diaphragm insulating layer extends on the buried face of the diaphragm and a lateral insulating region extends into the semiconductor body along a closed line, between the first main surface and the diaphragm insulating layer, above the buried cavity. The lateral insulating region laterally delimits the diaphragm and forms, with the diaphragm insulating layer, a diaphragm insulating region which delimits the diaphragm and electrically insulates it from the rest of the wafer.

A micromechanical component for a sensor device, including a substrate, at least one first counter-electrode, at least one first electrode adjustably situated on a side of the at least one first counter-electrode facing away from the substrate, and a capacitor sealing structure, which seals gas-tight an interior volume, including the at least one first counter-electrode present therein and the at least one first electrode present therein. The at least one first counter-electrode is fastened directly or indirectly to a frame structure fastened directly or indirectly to the substrate, and the frame structure framing a cavity, and the at least one first counter-electrode at least partially spanning the cavity in such a way that at least one gas is transferable between the cavity and the interior volume via at least one opening formed at and/or in the at least one first counter-electrode.